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US 6,746,821 B2Granted
Method of structuring a photoresist layer
AssigneeInfineon Technologies AG
InventorsErnst-Christian Richter, Michael Sebald
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Abstract
A method structures a chemical amplification photoresist layer, in which a photoresist layer of the chemically amplified type is brought into contact, before or after the exposure for structuring, with a base which is capable of diffusing into the photoresist layer. As a result of this treatment with the base, greater steepness and less roughness of the resist profiles are achieved in the subsequent development step.
Claims38
A method of structuring a photoresist layer, which comprises:
- providing a substrate;
- applying a photoresist layer at least partially to the substrate;
- the photoresist layer including a film-forming polymer having molecular groups convertible into alkali-soluble groups at a given temperature by acid-catalyzed cleavage reactions, and including a photosensitive acid generator for liberating an acid when exposed to light in a defined wavelength range;
- partially exposing the photoresist layer to light in the defined wavelength range;
- contacting the photoresist layer with a base over a specific period;
- allowing the base to diffuse into the photoresist layer;
- heating the photoresist layer to the given temperature to cause the cleavage reaction catalyzed by the photolytically produced acid;
- and
- developing the photoresist layer.
6 more elements
Dependencies are inferred from the claim text.