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US 6,746,727 B1Granted
Metal to ILD adhesion improvement by reactive sputtering
AssigneeIntel Corporation
InventorsJick Yu, Chi Hing Choi
Life of this patent
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Abstract
A method is described involving depositing a dielectric layer. The surface of the dielectric layer is modified to prevent outdiffusion from the dielectric layer. A metal layer is deposited above the modified surface of the dielectric layer.
Claims10
A method comprising:
- depositing a dielectric layer;
- improving the metal-to-dielectric adhesion of a surface of said dielectric layer by treating the surface with a nitrogen plasma;
- and
- depositing a metal layer directly on the surface that was treated with the nitrogen plasma, wherein the treating and the depositing are conducted in a same chamber.
1 more element
Dependencies are inferred from the claim text.