Method and apparatus for providing etch uniformity using zoned temperature control

A method comprising:

• forming a process layer above a semiconducting substrate;
• etching at least a portion of said process layer;
• measuring a depth of the etch at a plurality of locations in a first preselected region of the semiconducting substrate;
• measuring a depth of the etch at a plurality of locations in a second preselected region of the semiconducting substrate;
• determining if at least a portion of the first preselected region is etched to a first desired depth based on the measured depth of the plurality of locations in the first preselected region;
• varying the temperature of a subsequently processed semiconducting substrate in a region corresponding to the first preselected region in response to determining the at least the portion of the first preselected region is not etched to the first desired depth;
• determining if at least a portion of the second preselected region is etched to a second desired depth based on the measured depth of the plurality of locations in the second preselected region;
• and
• varying the temperature of a subsequently processed semiconducting substrate in a region corresponding to the second preselected region in response determining the at least the portion of the second preselected region is not etched to the second desired depth.

A method comprising:

• forming a process layer above a semiconducting substrate;
• etching at least a portion of said process layer;
• measuring a first depth of the etch at a first location in a first preselected region of the semiconducting substrate;
• measuring a second depth of the etch at a second location in a second preselected region of the semiconducting substrate;
• comparing the first depth to the second depth;
• varying the temperature of a subsequently processed semiconducting substrate in a region corresponding to the first preselected region in response to the first depth being different from the second depth.