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US 6,746,553 B2Granted
Process for producing sputtering target materials
AssigneeHoneywell International Inc.
InventorsLijun Yao, Tadao Ueda
Life of this patent
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Abstract
The invention includes methods of reducing grain sizes of materials, and methods of forming sputtering targets. The invention includes a method for producing a sputtering target material in which a metallic material is subjected to plastic working at a processing percentage of at least 5% and a processing rate of at least 100%/second. In particular applications the metallic material comprises one or more of aluminum, copper and titanium.
Claims12
A method for producing a reduced grain size metallic material comprising:
- providing a first die and a second die;
- providing a metallic material between the first die and the second die;
- and
- pressing the material between the first die and the second die at a processing rate of greater than or equal to about 100%/second.
1 more element
A method of producing a sputtering component material comprising:
- providing a die;
- elevating a weight above the die;
- providing a material between the die and the weight;
- and
- dropping the weight onto the die from a height sufficient to process the material at a rate of at least 100%/second.
2 more elements
Dependencies are inferred from the claim text.