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US 6,744,071 B2Granted
Nitride semiconductor element with a supporting substrate
AssigneeNichia Corporation
InventorsMasahiko Sano, Mitsuhiro Nonaka, Kazumi Kamada, Masashi Yamamoto
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Abstract
A highly efficient nitride semiconductor element having an opposed terminal structure, whose terminals face each other. The nitride semiconductor element includes a conductive layer, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal, on a supporting substrate successively. The first terminal and a first insulating protect layer are interposed between the conductive layer and a first conductive type nitride semiconductor layer of the nitride semiconductor.
Claims16
A nitride semiconductor element comprising,
- at least a conductive layer, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal, from a supporting substrate successively, wherein,
- the first terminal and a first insulating protect layer are interposed between the conductive layer and a first conductive type nitride semiconductor layer of the nitride semiconductor.
Dependencies are inferred from the claim text.