Process for producing aluminum oxide films at low temperatures

A process of depositing a thin film of aluminum oxide on a substrate that is sensitive to moisture by an atomic layer deposition (ALD) process comprising a plurality of cycles, each cycle comprising:

• supplying a first reactant comprising a gaseous organic aluminum compound, wherein no more than about one monolayer chemisorbs on the substrate;
• and
• supplying a gaseous second reactant comprising a source of oxygen other than water, wherein the second reactant converts the adsorbed portion of the first reactant on the substrate to aluminum oxide,
• wherein the substrate is maintained at a temperature of less than 190° C. during the ALD process.

A process of depositing a thin film of aluminum oxide on a substrate that is sensitive to the atmosphere by an atomic layer deposition (ALD) process comprising a plurality of cycles, each cycle comprising:

• supplying a first reactant comprising a gaseous aluminum compound, wherein no more than about one monolayer chemisorbs on the substrate;
• and
• supplying gaseous ozone, wherein the ozone converts the adsorbed portion of the first reactant on the substrate to aluminum oxide,
• wherein the substrate is maintained at a temperature of less than 190° C. during the ALD process.

A process of depositing a thin film of aluminum oxide on a substrate in a reaction chamber by an atomic layer deposition (ALD) process comprising a plurality of cycles, each cycle comprising:

• supplying a first reactant comprising a gaseous aluminum compound, wherein no more than about one monolayer chemisorbs on the substrate;
• and
• supplying a gaseous second reactant comprising a source of oxygen selected from the group consisting of ozone, organic ozonides, oxygen atoms with unpaired electrons, organic peroxides and organic peracids, wherein the second reactant converts the adsorbed portion of the first reactant on the substrate to aluminum oxide,
• wherein the substrate is maintained at a temperature of less than 190° C. during the ALD process.