Nano-size imprinting stamp using spacer technique

A method of forming a wide-area nano-size imprinting stamp, comprising:

• depositing a feature layer on an usable area of a base surface of a substrate;
• patterning and then dry etching the feature layer to define a plurality of micro-features having a top surface and opposed side surfaces;
• conformally growing a spacer layer on the micro-features until the spacer layer has a desired thickness that is substantially equal on the top and opposed side surfaces;
• anisotropically etching the spacer layer to remove a portion of the spacer layer that is disposed on the top surface to define a plurality of imprint stamps that include a plurality spacers disposed on the opposed side surfaces of their respective micro-features;
• repeating the conformal growing and the anisotropically etching steps as necessary to define additional spacers on the imprint stamps;
• planarizing the imprint stamps so that the micro-features and the spacers extend outward of the base surface by a substantially identical height;
• and
• selectively etching a selected one or more of the spacers and micro-features to define an imprint profile in the imprint stamps;
• and
• repeating the selectively etching step as necessary to selectively etch a selected one or more of the spacer and micro-features to further define the imprint profile of the imprint stamps.