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US 6,743,293 B2Granted
Cruicible and growth method for polycrystal silicon using same
AssigneeShusaku Kabushiki Kaiksha
InventorNobuyuki Katoh
Life of this patent
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Abstract
A crucible used in the growth of polycrystal silicon by a cast method comprises a crucible body for, when solid material silicon is melted, containing the melted material silicon, and a material holder provided on the crucible body, for holding further material silicon on the material silicon loaded into the crucible body.
Claims9
A crucible used in the growth of a polycrystal silicon by a cast method, comprising:
- a crucible body for, when a solid material silicon is melted, containing the melted material silicon;
- and
- a material holder provided on the crucible body, for holding further material silicon on the material silicon loaded into the crucible body.
Dependencies are inferred from the claim text.