Alkaline solution and manufacturing method, and alkaline solution applied to pattern forming method, resist film removing method, solution application method, substrate treatment method, solution supply method, and semiconductor device manufacturing method
AssigneeKabushiki Kaisha Toshiba
InventorsRiichiro Takahashi, Kei Hayasaki, Tomoyuki Takeishi, Shinichi Ito
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Abstract
A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.
Claims12
A solution supplying method of scanning a linear solution supply nozzle from one end to the other end of a substrate, and supplying a solution onto the substrate via the solution supply nozzle to form a solution film on the substrate, said method comprising:
- controlling at least one of a supply amount of a solution from the solution supply nozzle and a scanning speed of said solution supply nozzle so that a film thickness d of the solution film formed on said substrate is equal to a gap H between said solution supply nozzle and the substrate.
A solution supplying method of scanning a linear solution supply nozzle from one end to the other end of a substrate, and supplying a solution onto the substrate via the solution supply nozzle to form a solution film on the substrate, said method comprising:
- setting a gap H (mm) between said solution supply nozzle and the substrate to a value obtained by dividing a solution supply speed Q (μl/sec) from said solution supply nozzle by a product of a scanning speed V (mm/sec) of said solution supply nozzle and a length L (mm) of a discharge port of said solution supply nozzle.
A solution supplying method of scanning a linear solution supply nozzle from one end to the other end of a substrate, and supplying a solution onto the substrate via the solution supply nozzle to form a solution film on the substrate, said method comprising:
- setting a solution supply speed Q (μl/sec) to a product of a gap H (mm) between said solution supply nozzle and the substrate, a scanning speed V (mm/sec) of said solution supply nozzle, and a length L (mm) of a discharge port of said solution supply nozzle.
A solution supplying method of scanning a linear solution supply nozzle from one end to the other end of a substrate and forming a solution film on the substrate, said method comprising:
- setting a scanning speed V (mm/sec) of said solution supply nozzle to a value corresponding to a value obtained by dividing a solution supply speed Q (μl/sec) from said solution supply nozzle by a product of a gap H (mm) between a supply position of said solution supply nozzle and the substrate and a length L (mm) of a discharge port of said solution supply nozzle.
A manufacturing method of a semiconductor device of scanning a linear solution supply nozzle from one end to the other end of a substrate, and supplying a solution onto the substrate via the solution supply nozzle to form a solution film on the substrate, said method comprising:
- controlling at least one of a supply amount of a solution from the solution supply nozzle and a scanning speed of said solution supply nozzle so that a film thickness d of the solution film formed on said substrate is equal to a gap H between said solution supply nozzle and the substrate.
A manufacturing method of a semiconductor device of scanning a linear solution supply nozzle from one end to the other end of a substrate, and supplying a solution onto the substrate via the solution supply nozzle to form a solution film on the substrate, said method comprising:
- setting a gap H (mm) between said solution supply nozzle and the substrate to a value obtained by dividing a solution supply speed Q (μl/sec) from said solution supply nozzle by a product of a scanning speed V (mm/sec) of said solution supply nozzle and a length L (mm) of a discharge port of said solution supply nozzle.
A manufacturing method of a semiconductor device of scanning a linear solution supply nozzle from one end to the other end of a substrate, and supplying a solution onto the substrate via the solution supply nozzle to form a solution film on the substrate, said method comprising:
- setting a solution supply speed Q (μl/sec) to a product of a gap H (mm) between said solution supply nozzle and the substrate, a scanning speed V (mm/sec) of said solution supply nozzle, and a length L (mm) of a discharge port of said solution supply nozzle.
A manufacturing method of a semiconductor device of scanning a linear solution supply nozzle from one end to the other end of a substrate, and supplying a solution onto the substrate from the solution supply nozzle to form a solution film on the substrate, said method comprising:
- setting a scanning speed V (mm/sec) of said solution supply nozzle to a value corresponding to a value obtained by dividing a solution supply speed Q (μl/sec) from said solution supply nozzle by a product of a gap H (mm) between a supply position of said solution supply nozzle and the substrate and a length L (mm) of a discharge port of said solution supply nozzle.
Dependencies are inferred from the claim text.