Multi-zone resistance heater
AssigneeTokyo Electron Limited
InventorsWayne L. Johnson, Eric J. Strang
Life of this patent
Estimating the term…
Abstract
A substrate holder for holding a substrate (e.g., a wafer or an LCD panel) during plasma processing. The substrate holder is a stack of processing elements which each perform at least one function. The elements include an electrostatic chuck (102), an He gas distribution system (122), multi-zone heating plates (132), and multi-zone cooling system (152). Each element is designed to match the characteristic of the processing system, e.g., by applying heat based on a heat loss characteristic of the substrate during normal processing. The integrated design allows for precise control of the operating conditions, including, but not limited to, fast heating and fast cooling of a substrate.
Claims43
A heater for heating a substrate in a processing gas within a processing reactor, said heater comprising:
- a first quartz plate having an external face and an internal face opposing said external face,
- a second quartz plate having an internal face, said second quartz plate being disposed proximate and generally parallel to said first quartz plate with the internal face of said first quartz plate substantially adjacent the internal face of said second quartz plate,
- a first heater element;
- a first channel formed in at least one of the internal faces of said first and second quartz plates of a configuration commensurate with that of said first heater element for receiving said first heater element therein;
- a first seal sealing together said first and second quartz plates with said first heater element secured there between, to form a gas-tight chamber (a) between said first and second quartz plates and (b) around the first channel;
- and
- a first protective gas duct for admitting gas of a predetermined composition and pressure into the first channel independent of the composition and pressure of the processing gas existing externally to the heater.
A multi-zone heater for heating a substrate in a processing gas within a processing reactor, said multi-zone heater comprising:
- a first quartz plate having an external face exposed to the processing gas, said first quartz plate also having an internal face opposing said external face;
- a second quartz plate having an internal face, said second quartz plate being disposed proximate and generally parallel to said first quartz plate with the internal face of said first quartz plate substantially adjacent the internal face of said second quartz plate;
- a first heater element in a first zone;
- a fast channel formed in at least one of the internal faces of said first and second quartz plates of a configuration commensurate with that of said first heater element for receiving said first heater element therein;
- a first seal sealing together said first and second quartz plates with said first heater element secured there between, to form a gas-tight chamber between said first and second quartz plates;
- a first protective gas duct for admitting gas of a first predetermined composition and pressure into the first channel independent of the composition and pressure of the processing gas existing externally to the heater;
- a second heater element in a second zone;
- a second channel formed in at least one of the internal faces of said first and second quartz plates having a channel formed therein of a configuration commensurate with that of said second heater element for receiving said second heater element therein:
- a second seal sealing together said first and second quartz plates to separate the second heater element secured there between from the first heater element and to provide a gas-tight seal around the second channel;
- and
- a second protective gas duct for admitting gas of a second predetermined composition and pressure into the second channel independent of the composition and pressure of the processing gas existing externally to the heater.
A heater for heating a substrate in a processing gas within a processing reactor, said heater comprising:
- a first alumina plate having an external face and an internal face opposing said external face,
- a second alumina plate having an internal face, said second alumina plate being disposed proximate and generally parallel to said first alumina plate with the internal face of said first alumina plate substantially adjacent the internal face of said second alumina plate, a first heater element;
- a first channel formed in at least one of the internal faces of said first and second alumina plates of a configuration commensurate with that of said first heater element for receiving said first heater element therein;
- a first seal sealing together said first and second alumina plates with said first heater element secured there between, to form a gas-tight chamber (a) between said first and second alumina plates and (b) around the first channel;
- and
- a first protective gas duct for admitting gas of a predetermined composition and pressure into the first channel independent of the composition and pressure of the processing gas existing externally to the heater.
A heater for heating a substrate in a processing gas within a processing reactor, said heater comprising:
- a first quartz plate having an external face and an internal face opposing said external face,
- a featured quartz spacer having an upper face and a lower face, said spacer being disposed proximate and generally parallel to the internal face of said first quartz, wherein said spacer contains openings forming a channel when fused to the first quartz plate;
- a second quartz plate having an upper face and a lower face, said second quartz plate being disposed proximate and generally parallel to the lower face of said spacer;
- a first heater element commensurate in shape with that of said channel;
- and
- a first seal sealing together said first quartz plate, said spacer and said second quartz plate, with said first heater element secured there between, to form a gas-tight chamber around the first channel.
A heater for heating a substrate in a processing gas within a processing reactor, said heater comprising:
- a first quartz plate having an external face and an internal face opposing said:
- external face,
- a second quartz plate having an internal face, said second quartz plate being disposed proximate and generally parallel to said first quartz plate with the internal face of said first quartz plate substantially adjacent the internal face of said second quartz plate,
- a first heater element;
- a first channel formed in at least one of the internal faces of said first and second quartz plates for receiving said first heater element therein, wherein the first channel is similar in shape but substantially larger than the first heater element;
- a first seal sealing together said first and second quartz plates with said first heater element secured there between, to form a gas-tight-chamber (a) between said first and second quartz plates and (b) around the first channel.
A method of manufacturing a substrate holder comprising the steps of etching a quartz plate to form an inlet and an outlet;
- etching the quartz plate to form a channel connecting the inlet to the outlet;
- depositing a metal in the channel, inlet and outlet;
- and
- sealing a plate to the top of the channel to surround the metal.
A method of manufacturing a substrate holder comprising the steps of etching a quartz plate to form an inlet and an outlet;
- etching the quartz plate to form a channel connecting the inlet to the outlet;
- depositing a metal in the channel, inlet and outlet;
- and
- depositing quartz above the channel to surround the metal.
A multi-layer substrate holder comprising:
- a first processing layer comprising a heating element and configured to facilitate a first operation on a substrate being processed;
- a second processing layer comprising a cooling element and configured to facilitate a second operation on a substrate being processed;
- and
- a lifting device for separating the first and second processing layers during at least one of the first and second operations.
Dependencies are inferred from the claim text.