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US 6,737,293 B2Granted
Manufacturing of a thin film inorganic light emitting diode
AssigneeAgfa-Gevaert
InventorHieronymus Andriessen
Life of this patent
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Abstract
Nanoparticle dispersions of ZnS doped with a luminescent center are prepared by precipitation from aqueous solutions. When such dispersions are coated between conductive electrodes a Thin Film Inorganic Light Emitting Diode device is obtained.
Claims14
A method for manufacturing a Thin Film Inorganic Light Emitting Diode device, said method comprising the following steps, in order:
- (1) preparing a nanoparticle dispersion of ZnS doped with a luminescent centre by precipitation from appropriate aqueous solutions comprising zinc ions, sulfide ions and dopant ions,
- (2) washing said dispersion of doped ZnS to remove non-precipitated ions,
- (3) coating onto a first conductive electrode said washed dispersion of doped ZnS, optionally after admixture with a binder,
- (4) applying on top of said coated layer resulting from step (3) a second conductive electrode, with the proviso that at least one of said first and second electrode is transparent.
1 more element
A Thin Film Inorganic Light Emitting Diode device manufactured according to a method for manufacturing a Thin Film Inorganic Light Emitting Diode device, said method comprising the following steps, in order:
- (1) preparing a nanoparticle dispersion of ZnS doped with a luminescent center by precipitation from appropriate aqueous solutions comprising zinc ions, sulfide ions and dopant ions,
- (2) washing said dispersion of doped ZnS to remove non-precipitated ions,
- (3) coating onto a first conductive electrode said washed dispersion of doped ZnS, optionally after admixture with a binder, and
- (4) applying on top of said coated layer resulting from step (3) a second conductive electrode, with the proviso that at least one of said first and second electrodes is transparent.
1 more element
Dependencies are inferred from the claim text.