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US 6,728,591 B1Granted
Method and apparatus for run-to-run control of trench profiles
AssigneeAdvanced Micro Devices, Inc.
InventorsJames H. Hussey, Jr., Matthew A. Purdy
Life of this patent
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Abstract
A method and an apparatus are provided for performing run-to-run control of trench profiles. At least one semiconductor wafer is processed. A trench metrology data from the processed semiconductor wafer is acquired. Data relating to at least one process chamber characteristic is acquired while processing the semiconductor wafer. A chamber characteristic adjustment process is performed in response to the trench metrology data and the data relating to the processing chamber characteristic. A feedback adjustment of the processing chamber characteristic is performed in response to the chamber characteristic adjustment process.
Claims27
A method, comprising:
- processing at least one semiconductor wafer;
- acquiring a trench metrology data from said processed semiconductor wafer;
- acquiring data relating to at least one process chamber characteristic, said data acquired while processing said semiconductor wafer;
- performing a chamber characteristic adjustment process in response to said trench metrology data and said data relating to said processing chamber characteristic, said chamber characteristic adjustment process comprising correlating said metrology data to said process chamber characteristic and adjusting at least one characteristic relating to said chamber based upon said correlating;
- and
- performing a feedback adjustment of said processing chamber characteristic in response to said chamber characteristic adjustment process, for processing at least another semiconductor wafer.
3 more elements
A method, comprising:
- processing at least one semiconductor wafer to form at least one trench structure in said semiconductor wafer;
- acquiring a trench metrology data from said processed semiconductor wafer;
- acquiring data relating to at least one process chamber characteristic, said data acquired while processing said semiconductor wafer;
- analyzing trench errors based upon said trench metrology data;
- correlating at least one trench error to a processing chamber characteristic based upon said analysis of trench errors;
- determining a correction factor for adjusting at least one chamber characteristic based upon said correlated trench error;
- performing at least one adjustment to said chamber characteristic based upon said correction factor and performing a feedback adjustment of said processing chamber characteristic in response to said chamber characteristic adjustment process, for processing at least another semiconductor wafer.
4 more elements
A system, comprising:
- a metrology data storage unit to receive trench metrology data;
- a chamber data storage to receive chamber characteristic data relating to a processing of a semiconductor wafer;
- a chamber characteristic/metrology data correlation unit operatively coupled with said metrology data storage unit and said chamber data storage unit, said chamber characteristic/metrology data correlation unit to correlate said trench metrology data with corresponding chamber characteristic data;
- and
- a chamber control model to modify a chamber characteristic during a time period of processing of a semiconductor wafer based upon said correlated trench metrology data and corresponding chamber characteristic data.
2 more elements
An apparatus, comprising:
- means for processing at least one semiconductor wafer to form at least one trench structure in said semiconductor wafer;
- means for acquiring a trench metrology data from said processed semiconductor wafer;
- means for acquiring data relating to at least one process chamber characteristic, said data acquired while processing said semiconductor wafer;
- means for analyzing trench errors based upon said trench metrology data;
- means for correlating at least one trench error to a processing chamber characteristic based upon said analysis of trench errors;
- means for determining a correction factor for adjusting at least one chamber characteristic based upon said correlated trench error;
- means for performing at least one adjustment to said chamber characteristic based upon said correction factor and
- means for performing a feedback adjustment of said processing chamber characteristic in response to said chamber characteristic adjustment process, for processing at least another semiconductor wafer.
5 more elements
A computer readable program storage device encoded with instructions that, when executed by a computer, performs a method, comprising:
- processing at least one semiconductor wafer;
- acquiring a trench metrology data from said processed semiconductor wafer;
- acquiring data relating to at least one process chamber characteristic, said data acquired while processing said semiconductor wafer;
- performing a chamber characteristic adjustment process in response to said trench metrology data and said data relating to said processing chamber characteristic, said chamber characteristic adjustment process comprising correlating said metrology data to said process chamber characteristic and adjusting at least one characteristic relating to said chamber based upon said correlating;
- and
- performing a feedback adjustment of said processing chamber characteristic in response to said chamber characteristic adjustment process, for processing at least another semiconductor wafer.
3 more elements
Dependencies are inferred from the claim text.