Widely wavelength tunable integrated semiconductor device and method for widely tuning semiconductor devices
AssigneesInteruniversitair Microelektronica Centrum, Rljksuniversiteit Gent
InventorsGert Sarlet, Jens Buus, Roel Baets
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Abstract
Alternative laser structures, which have potentially the same tuning performance as (S)SG-DBR and GCSR lasers, and a fabrication process which is similar to that of the (S)SG-DBR laser, are presented. The advantage of these structures is that the output power does not pass through a long passive region.
Claims20
A widely tunable resonator apparatus comprising:
- a substrate comprising a semiconductor material;
- and
- at least two resonator sections formed on said substrate, wherein each of said at least two resonator sections comprise one of a transmission filter and a reflector, and said at least two resonator sections are coupled so as to have at least one common optical coupling point with at least one other resonator section of said at least two resonator sections,
- wherein each of the at least two resonator sections comprises a waveguide system, each waveguide system operatively having spaced resonant maxima points, so as to provide one of a maximum transmittance and a maximum reflectance when subjected to energy of a wavelength corresponding with one of said resonant maxima points, and
- wherein at least two of said plurality of resonant maxima points are differently spaced in the frequency domain and at least one of said resonant maxima points of each of said at least two resonator sections overlap.
A method for setting lasing frequencies of a widely tunable resonator apparatus, the apparatus comprising a substrate made of a semiconductor material, at least two resonator sections being formed on said substrate, wherein each of said at least two resonator sections comprise one of a transmission filter and a reflector, and said at least two resonator sections are coupled so as to have at least one common optical coupling point with at least one other resonator section of said at least two resonator sections, and at least one phase control section coupled with said at least two resonator sections, wherein each of said at least two resonator sections comprises a waveguide system, each waveguide system operatively having spaced resonant maxima points, so as to provide one of a maximum transmittance and a maximum reflectance when subjected to energy of a wavelength corresponding with one of said resonant maxima points, said method comprising:
- positioning said resonant maxima points of said at least two resonators, using one or more of said at least two resonator sections, such that at least two points of said resonant maxima points of each of said at least two resonator sections overlap, wherein said at least two points define said lasing frequencies.
A semiconductor laser apparatus comprising:
- a substrate made of a semiconductor material;
- at least two resonator sections, wherein each of said at least two resonator sections comprise one of a transmission filter and a reflector, and at least two resonator sections are coupled so as to have at least one common optical coupling point with at least one other resonator section of said at least two resonator sections, wherein each of the at least two resonator sections comprises a waveguide system, each waveguide system operatively having a plurality of spaced resonant maxima points, so as to provide one of a maximum transmittance and a maximum reflectance when subjected to energy of a wavelength corresponding with one of said resonant maxima points;
- and
- a two-sided active radiation-generating section formed on said substrate, said at least two resonator sections being coupled with a single side of said two-sided active section;
- wherein at least two of said plurality of resonant maxima points are differently spaced in the frequency domain, and at least one of said resonant maxima points of each of said at least two resonator sections overlap.
Dependencies are inferred from the claim text.