Method for assessing the reliability of interconnects
AssigneeAdvanced Micro Devices, Inc.
InventorsChristine Hau-Riege, Amit Marathe
Life of this patent
Estimating the term…
Abstract
A methodology for testing interconnect structures includes testing a number of short line interconnects having the same length and different reservoir sizes. By measuring and comparing the stress values on the interconnects, a relationship between reservoir area and jLcrit may be obtained. This information may then be used to more accurately assess the reliability of an interconnect and to design more reliable interconnects.
Claims20
A method for testing interconnect structures, comprising:
- forming a plurality of interconnects, each of the interconnects having two ends with a contact and a reservoir located at each of the ends, wherein each of the interconnects has the same length and a different reservoir size;
- supplying a voltage to each of the plurality of interconnects;
- measuring stress values for each of the respective interconnects;
- and
- determining a relationship between reservoir size and jLcrit where jLcrit represents a current density (j) and interconnect length (L) product below which an interconnect is considered to be immortal.
A method for testing a plurality of interconnects, each of the interconnects including a via located at each end of the interconnect and each of the interconnects having a same length (L) and a different reservoir size, and wherein each of the interconnects has a theoretical current density and length product (jLcrit) value, below which the interconnect is considered immortal, the method comprising:
- supplying a voltage to a first one of the vias for each of the respective interconnects, the voltage resulting in a first current density j on each of the interconnects, such that jL for a first one of the interconnects is below its jLcrit value;
- measuring stress values for each of the respective interconnects;
- and
- determining that at least one of the plurality of interconnects is not immortal at the first current density.
A method of analyzing a plurality of interconnects, each interconnect having a length (L) and a reservoir located at each end of the interconnect, wherein each of the interconnects has a different reservoir size, the method comprising:
- applying a voltage to each of the interconnects such that a current density (j) on each of the interconnects is achieved, wherein jL for a first one of the interconnects is less than a theoretical jLcrit value and the first interconnect is considered immortal;
- measuring stress values for each of the plurality of interconnects;
- and
- estimating a median time to failure for each of the plurality of interconnects based on the measured stress values.
Dependencies are inferred from the claim text.