# US 6,724,794 B2 · Opto-electronic device integration

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- Number: US 6,724,794 B2
- Document ID: US6724794B2
- Status: Granted
- Kind: B2
- Application number: 09/897,160
- Filed: 2001-06-29
- Published: 2003-01-16
- Granted: 2004-04-20
- Earliest claimed: 2001-06-29
- Assignees: Xanoptix, Inc.
- Inventors: Greg Dudoff; John Trezza
- Web page: https://patentgrep.com/patent/US6724794B2

## CPC

- H10H 20/8314: {extending at least partially onto an outer side surface of the bodies}
- G02B 6/4204: {the coupling comprising intermediate optical elements, e.g. lenses, holograms (encapsulated active devices H01S5/02208)}
- H10F 39/199: {Back-illuminated image sensors}
- H10H 20/01: Manufacture or treatment
- H10W 90/00: Package configurations
- G02B 6/4249: {comprising arrays of active devices and fibres}
- G02B 6/4292: {the light guide being disconnectable from the opto-electronic element, e.g. mutually self aligning arrangements}
- H01S 5/0201: {Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth}
- H01S 5/0207: {Substrates having a special shape}
- H01S 5/0217: {Removal of the substrate}
- H01S 5/0234: Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
- H01S 5/02345: Wire-bonding
- H01S 5/0237: by soldering
- H01S 5/18305: {with emission through the substrate, i.e. bottom emission}
- H01S 5/4087: {emitting more than one wavelength}
- H01S 5/423: {having a vertical cavity}
- H10F 39/12: Image sensors
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout}
- H10P 72/7432: {used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate}
- H10W 72/07251: {characterised by changes in properties of the bump connectors during connecting}
- H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W 72/90: Bond pads, in general
- H10W 72/9415: {relative to the surface, e.g. recessed, protruding}
- H10W 72/942: {relative to underlying supporting features, e.g. bond pads, RDLs or vias}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method of integrating a chip with a topside active optical chip is described. The topside active optical chip has at least one optical laser device, having an active side including an optically active region, a laser cavity having a height, an optically inactive region, a bonding side opposite the active side, and a device thickness. The method involves bonding the optical chip to the electronic chip; applying a substrate to the active side, the substrate having a substrate thickness over the active region in the range of between a first amount and a second amount, and applying an anti-reflection without a special patterning or distinguishing between the at least one optical laser device and any other device. A hybrid electro-optical chip is also described as having an electronic chip; and a topside active optical chip. The hybrid electro-optical chip having been created by one of the methods herein. A module is also described. The module has an optical chip having at least one topside active laser and at least one photodetector, the at least one topside active laser having opposed mirrors defining an active region therebetween, an electronic chip bonded to the optical chip, and an anti-reflection coating on top of the substrate over the active region that was applied without distinguishing between the at least one topside active laser and the at least one photodetector as part of an anti-reflection coating process.

## Claims

### Claim 1

A method of integrating a chip with a topside active optical chip, the topside active optical chip comprising at least two optical laser devices, each having an active side including an optically active region, a laser cavity having a height, an optically inactive region, a bonding side opposite the active side, and a device thickness, the method comprising:
bonding the optical chip to the electronic chip;
applying a substrate to the active side, the substrate having a substrate thickness over the active region in the range of between a first amount and a second amount, the first amount being between a minimum lasing thickness and about ten times the height of the laser cavity, the second amount being about 100 microns; and
applying an anti-reflection coating without a special patterning or distinguishing between the at least two optical laser devices and any other optical device.

### Claim 2 (depends on 1)

The method of claim 1 wherein the applying further comprises:
thinning the substrate over the optically active region to a thinned substrate thickness of about the device thickness.

### Claim 3 (depends on 1)

The method of claim 1 wherein the applying further comprises:
thinning the substrate over the optically active region to a thinned substrate thickness in a range of about 0 microns to about 100 microns.

### Claim 4 (depends on 1)

The method of claim 1 wherein the applying further comprises:
thinning the substrate over the optically active region to a thinned substrate thickness in a range of about 50 microns to about 100 microns.

### Claim 5 (depends on 1)

The method of claim 1 wherein the applying further comprises:
thinning the substrate over the optically active region to a thinned substrate thickness in a range of about 20 microns to about 100 microns.

### Claim 6 (depends on 1)

The method of claim 1 wherein the applying further comprises:
thinning the substrate over the optically active region to a thinned substrate thickness in a range of about 20 microns to about 50 microns.

### Claim 7 (depends on 1)

The method of claim 1 further comprising:
creating access ways in the substrate.

### Claim 8 (depends on 7)

The method of claim 7 further comprising:
drilling into the substrate.

### Claim 9 (depends on 7)

The method of claim 7 further comprising:
etching the substrate so that the substrate has a hole.

### Claim 10 (depends on 9)

The method of claim 9 wherein the etching comprises:
creating a straight sidewall to define at least a portion of the hole.

### Claim 11 (depends on 9)

The method of claim 9 wherein the etching comprises:
creating a sloped sidewall to define at least a portion of the hole.

### Claim 12 (depends on 9)

The method of claim 9 wherein the etching comprises:
creating a straight sidewall to define a first portion of the hole; and
creating a striped sidewalls to define a second portion of the hole.

### Claim 13 (depends on 1)

The method of claim 1 wherein the at least one optical device comprises a detector, and the method further comprises:
anti-reflection coating the detectors.

### Claim 14 (depends on 1)

The method of claim 1, wherein the substrate has a surface area immediately after the applying, the method further comprising:
resist patterning the substrate to increase the surface area by an amount.

### Claim 15 (depends on 1)

The method of claim 1 wherein the substrate has a surface area immediately after the applying, the method further comprising:
removing substrate to increase the surface area by an amount.

### Claim 16 (depends on 1)

The method of claim 1 further comprising:
creating access ways in the substrate over the optically active region of a size sufficient to accommodate one of an optical fiber or a microlens.

### Claim 17 (depends on 1)

The method of claim 1 further comprising:
creating an access way in the substrate extending from a surface of the substrate into the thickness a distance.

### Claim 18 (depends on 17)

The method of claim 17 further comprising:
inserting an end of an optical fiber into the access way.

### Claim 19 (depends on 17)

The method of claim 17 further comprising:
supporting an end of an optical fiber using the access way.

### Claim 20 (depends on 17)

The method of claim 17 further comprising:
inserting a portion of a microlens into the access way.

### Claim 21 (depends on 1)

The method of claim 1 further comprising:
supporting at least a portion of a microlens using the access way.

### Claim 22 (depends on 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)

A hybrid electro-optical chip comprising:
an electronic chip; and
a topside active optical chip wherein the hybrid electro-optical chip is created by the method of one of claims 1-21.

### Claim 23

A hybridized module comprising:
an optical chip comprising at least two topside emitting lasers each having a substrate over an active region, the substrate having a first thickness, over an inactive region of the at least two topside emitting lasers and a second thickness, over the active region of the at least two topside emitting lasers, of less than about 100 microns;
an anti-reflection coating on a top surface of the substrate; and
an electronic chip to which the optical chip is bonded.

### Claim 24 (depends on 23)

The hybridized module of claim 23 wherein the second thickness is larger than an anti-lasing thickness but less than 100 microns, and wherein the hybrid module further comprises:
an anti-reflection coating applied to the substrate without a special patterning of the substrate of the at least two topside emitting lasers.

### Claim 25 (depends on 24)

The hybridized module of claim 24 further comprising:
at least one photodetector.

### Claim 26 (depends on 25)

The hybridized module of claim 25 further comprising:
the anti-reflection coating on the at least one photodetector.