Semiconductor device provided with memory chips
AssigneesRenesas Technology Corp., Ryoden Semiconductor System Engineering Corporation
InventorsRyuji Ohmura, Kazushi Sugiura, Shinichi Kobayashi
Life of this patent
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Abstract
In each of a plurality of memory chips in the semiconductor integrated circuit device, an address signal of a defective memory cell in a memory circuit is obtained by a pattern generation tester circuit and a repair analysis circuit, and stored in a replacement storage circuit. The address signal read out of the replacement storage circuit is set to a replacement-repair circuit, and the defective memory cell is replaced with a spare memory cell. The replacement of a defective memory cell with a spare memory cell is allowed even after packaging, so that the yield is increased. The test time is also reduced, as the plurality of memory chips are tested in parallel.
Claims11
A semiconductor device, comprising:
- a plurality of memory chips, each including a plurality of memory cells preassigned respectively with specific address signals, a spare memory cell for replacement of defective one of said plurality of memory cells, a holding circuit for holding the address signal of said defective memory cell, a memory cell select circuit receiving an address signal and selecting said spare memory cell for replacement of the memory cell corresponding to the received address signal when the received address signal matches the address signal held in said holding circuit, and selecting the memory cell corresponding to the received address signal when the received address signal differs from the address signal held in said holding circuit, and a write/read circuit performing writing/reading of a data signal to/from the memory cell selected by said memory cell select circuit;
- a tester circuit testing said plurality of memory chips in parallel, and obtaining the address signal of the defective one of said plurality of memory cells in each memory chip;
- a nonvolatile memory storing the address signal obtained by said tester circuit;
- and
- a transfer control circuit reading the address signal out of said nonvolatile memory for transfer to the holding circuit in the memory chip corresponding to the address signal.
Dependencies are inferred from the claim text.