Magnetic random access memory
AssigneeKabushiki Kaisha Toshiba
InventorsYoshihisa Iwata, Tomoki Higashi
Life of this patent
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Abstract
A read block is constituted of a plurality of TMR elements arranged in a lateral direction. One end of each of the TMR elements in the read block is connected in common, and connected to a source line via a read select switch. The other ends of TMR elements are independently connected to read bit lines/write word lines. The read bit lines/write word lines are connected to common data lines via a row select switch. The common data lines are connected to a read circuit.
Claims55
A magnetic random access memory comprising:
- memory cells which use a magneto resistive effect to store data, and which are arranged in parallel with a surface of a semiconductor substrate;
- a read select switch connected in common to one end of each of said memory cells;
- and
- bit lines which are disposed for said memory cells, and which extend in a first direction,
- wherein the other ends of said memory cells are independently connected to one of said bit lines.
A magnetic random access memory comprising:
- first and second memory cells which use a magneto resistive effect to store data, and which are arranged in parallel with a surface of a semiconductor substrate;
- a read select switch connected in common to one end of each of said first and second memory cells;
- a first bit line connected to the other end of said first memory cell;
- and
- a second bit line connected to the other end of said second memory cell.
A manufacturing method of a magnetic random access memory comprising:
- forming a read select switch in a surface region of a semiconductor substrate;
- forming bit lines which extend in a first direction on said read select switch, and which are arranged in parallel with a surface of said semiconductor substrate;
- forming MTJ elements connected to said bit lines right above said bit lines, and which are arranged in parallel with the surface of said semiconductor substrate;
- forming an electrode connected in common to said MTJ elements, and connected to said read select switch right above said MTJ elements;
- and
- forming a write line which extends in a second direction intersecting said first direction in the vicinity of said MTJ elements.
Dependencies are inferred from the claim text.