# US 6,724,513 B2 · Electro-optic device and electronic instrument > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 6,724,513 B2 - Document ID: US6724513B2 - Status: Granted - Kind: B2 - Application number: 10/355,223 - Filed: 2003-01-31 - Published: 2003-12-04 - Granted: 2004-04-20 - Earliest claimed: 2002-02-12 - Assignees: Seiko Epson Corporation - Inventors: Masao Murade - Web page: https://patentgrep.com/patent/US6724513B2 ## CPC - H10D 86/00: Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates - G02F 1/136213: {Storage capacitors associated with the pixel electrode} - G02F 1/136209: {Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element} - G02F 1/136286: {Wiring, e.g. gate line, drain line} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS ## Abstract An electro-optic device has, on a TFT array substrate, a pixel electrode; a TFT connected thereto; a scanning line and a data line connected to the thin film transistor; a pixel potential side capacitance electrode that is connected to the pixel electrode and constitutes a storage capacitor; and a capacitance line that contains a fixed potential side capacitance electrode that is disposed oppositely via a dielectric film to the pixel potential side capacitance electrode and constitutes the storage capacitor. A width W1 of a portion that projects along the data line in the capacitance line is formed the same as or wider than a width W2 of the data line. Thereby, while realizing a lower resistance capacitance line, or an inhibition of an occurrence of a light leakage current in a TFT, an enhancement of an open area ratio can be satisfied. ## Claims ### Claim 1 An electro-optic device, comprising: a substrate, a scanning line above the substrate; a data line above the substrate; a thin film transistor disposed in correspondence with an intersection of the scanning line and the data line; a pixel electrode disposed in correspondence with the thin film transistor; a pixel potential side capacitance electrode that is electrically connected to the pixel electrode and constitutes a storage capacitor; and a dielectric film; a capacitance line that contains a fixed potential side capacitance electrode that is oppositely disposed via the dielectric film to the pixel potential side capacitance electrode and constitutes the storage capacitor; the capacitance line including a body line portion that extends along the scanning line and a portion that extends along the data line; and a width of a portion that extends along the data line in the capacitance line being formed at least as wide as the data line. ### Claim 2 (depends on 1) The electro-optic device according to claim 1, a periphery of a portion that extends along the data line in the capacitance line overlapping two-dimensionally with a periphery of the pixel electrode; and at least a part of a periphery of the data line not overlapping two-dimensionally with a periphery of the pixel electrode. ### Claim 3 (depends on 1) The electro-optic device according to claim 1, the capacitance line being, as a portion that extends along the data line, provided with a projection that projects along the data line from the body line portion; and a width of the projection being formed at least as wide as the data line. ### Claim 4 (depends on 1) The electro-optic device according to claim 1, a width of the body line portion in the capacitance line being formed wider than the scanning line. ### Claim 5 (depends on 4) The electro-optic device according to claim 4, a periphery of the body line portion in the capacitance line overlapping two-dimensionally with a periphery of the pixel electrode; and at least a part of a periphery of the scanning line not overlapping two-dimensionally with a periphery of the pixel electrode. ### Claim 6 (depends on 1) The electro-optic device according to claim 1, the capacitance line being disposed in a laminate position between a semiconductor layer that constitutes the thin film transistor and the data line. ### Claim 7 (depends on 6) The electro-optic device according to claim 6, a plurality of the pixel electrodes being formed in matrix on the substrate; and the capacitance line being electrically connected to a lower side light shielding film that is disposed below the thin film transistor and extending in lattice pattern along the scanning line and the data line. ### Claim 8 (depends on 1) The electro-optic device according to claim 1, the capacitance line having a notch portion, two dimensionally, corresponding to a formation site of a contact hole that connects the pixel electrode and the pixel potential side capacitance electrode. ### Claim 9 (depends on 1) The electro-optic device according to claim 1, the capacitance line being formed of a multi-layered film. ### Claim 10 (depends on 9) The electro-optic device according to claim 9, the capacitance line having a film made of a conductive material as an upper layer thereof and a film made of a light absorbing material as a lower layer thereof. ### Claim 11 (depends on 1) The electro-optic device according to claim 1, the data line being formed wider locally in a portion that overlaps with the thin film transistor; and a width of a portion that extends along the data line in the capacitance line being formed wider than a width of a portion that is not formed wider in the data line, and being formed to have the same width as a portion that is formed wider in the data line. ### Claim 12 (depends on 1) The electro-optic device according to claim 1, the data line being formed wider locally in a portion that overlaps with the thin film transistor; and a width of a portion that extends along the data line in the capacitance line being formed wider than a width of a portion that is not formed wider in the data line, and being formed narrower than a portion that is formed wider in the data line. ### Claim 13 (depends on 11) The electro-optic device according to claim 11, the capacitance line being disposed in a laminate position between the thin film transistor and the data line; and the data line being formed wider in a portion where a contact hole for use in connection with the thin film transistor is disposed, in addition to a portion that overlaps with the thin film transistor. ### Claim 14 (depends on 11) The electro-optic device according to claim 11, the data line being formed wider continuously from a portion that overlaps with the thin film transistor to a portion where the contact hole is disposed for each of the thin film transistors. ### Claim 15 (depends on 1) The electro-optic device according to claim 1, further comprising: another substrate disposed opposite via an electro-optic material to the substrate; and a light shielding film formed on the another substrate; a width of the data line and a portion that extends along the data line in the capacitance line being formed narrower than the light shielding film. ### Claim 16 (depends on 1) The electro-optic device according to claim 1, the width of the portion that extends along the data line in the capacitance line being formed wider than the width of the data line. ### Claim 17 An electronic instrument, comprising: an electro-optic device that includes: a substrate; a scanning line above the substrate; a data line above the substrate; a thin film transistor disposed in correspondence with an intersection of the scanning line and the data line; a pixel electrode disposed in correspondence with the thin film transistor; a pixel potential side capacitance electrode that is electrically connected to the pixel electrode and constitutes a storage capacitor; a dielectric film; and a capacitance line that contains a fixed potential side capacitance electrode that is oppositely disposed via the dielectric film to the pixel potential side capacitance electrode and constitutes the storage capacitor; the capacitance line including a body line portion that extends along the scanning line and a portion that extends along the data line; and a width of a portion that extends along the data line in the capacitance line being formed at least as wide as the data line.