# US 6,724,465 B2 · Lithography device which uses a source of radiation in the extreme ultraviolet range and multi-layered mirrors with a broad spectral band in this range

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- Number: US 6,724,465 B2
- Document ID: US6724465B2
- Status: Granted
- Kind: B2
- Application number: 10/130,519
- Filed: 2002-05-20
- Published: 2002-11-21
- Granted: 2004-04-20
- Earliest claimed: 1999-12-08
- Assignees: Commissariat a l'Energie Atomique
- Inventors: Danièle Babonneau; Rémy Marmoret; Laurence Bonnet
- Web page: https://patentgrep.com/patent/US6724465B2

## CPC

- H05G 2/002: {Supply of the plasma generating material}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- B82Y 40/00: Manufacture or treatment of nanostructures
- G03F 1/24: Reflection masks; Preparation thereof
- G03F 7/70033: {by plasma extreme ultraviolet [EUV] sources}
- G03F 7/702: {Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems}
- G03F 7/70233: {Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems}
- G03F 7/70575: {Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength}
- H05G: X-RAY TECHNIQUE (investigating or analysing materials by the use of X-rays G01N23/00; apparatus for X-ray photography G03B42/02; X-ray tubes H01J35/00; TV systems having X-ray input H04N5/321)
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

Lithography device using a source of radiation in the extreme ultraviolet range and multi-layered mirrors with a broad spectral band within this range. Each mirror (24, 26, 29) includes a stack of layers of a first material and layers of a second material alternating with the first material. The first material has an atomic number greater than that of the second material. The thickness of pairs of adjacent layers is a monotonic function of the depth in the stack. The source (22) comprises at least one target (28) which emits the radiation by interAction with a laser beam focused on one of its faces. A part (36) of the radiation emitted from the other face is used. The invention is applicable to the manufacture of integrated circuits with a high degree of integration.

## Claims

### Claim 1

A lithography device comprising:
a support (16) for a sample intended to be exposed in accordance with a specified pattern,
a mask (24) comprising the specified pattern in an enlarged form,
a source (22) of radiation in the extreme ultraviolet range,
optical means (26) for collection and for transmission of the radiation to the mask, the latter supplying an image of the pattern in enlarged form, and
optical means (29) for reduction of this image and for the projection of the reduced image onto the sample,
the mask, the optical means for the collection and the transmission and the optical means for reduction and projection comprising multi-layered mirrors, each multi-layered mirror comprising a substrate (74) and, on this substrate, a stack of layers (76) of a first material and of layers (78) of a second material which alternate with the layers of the first material, this first material having an atomic number greater than that of the second material, the first and second layers co-operating to reflect the extreme ultraviolet radiation, the stack having a free surface (80) onto which the radiation to be reflected arrives,
this device being characterized in that the source comprises at least one solid target (28), having first and second faces, this target being capable of emitting the extreme ultraviolet radiation by interAction with a laser bean (34) focused on the first face (30) of the target, this target being capable of emitting, in an anisotropic way, a part (36) of the extreme ultraviolet radiation from the second face (37) of this target, in that the optical means (26) for collection and for transmission are provided in order to transmit, to the mask (24), the part (36) of the extreme ultraviolet radiation coming from the second face (37) of the target of the source and in that the thickness of pairs of adjacent layers (76, 78), in the stack of layers that each mirror comprises, is a monotonic function of the depth in the stack, this depth being counted from the free surface (80) of the stack.

### Claim 2 (depends on 1)

Device according to claim 1, in which the target (28) contains a material which is capable of emitting the extreme ultraviolet radiation by interAction with the laser beam and the thickness of the target is within a range extending from about 0.05 μm to about 5 μm.

### Claim 3 (depends on 1)

Device according to claim 1, in which the target (28) contains a material which is capable of emitting the extreme ultraviolet radiation through interAction with the laser beam and which has an atomic number belonging to the group of atomic numbers ranging from 28 to 92.

### Claim 4 (depends on 1)

Device according to claim 1, comprising a plurality of targets (42) which are made integral one with another, the device additionally comprising means (48, 50) of displacing this plurality of targets so that these targets successively receive the laser beam (34).

### Claim 5 (depends on 4)

Device according to claim 4, additionally comprising support means (38, 44, 52) to which the targets (42) are fixed and which are capable of allowing the laser beam to pass in the direction of these targets, the means of displacement (48, 50) being provided in order to displace these means of support and hence the targets.

### Claim 6 (depends on 5)

Device according to claim 5, in which the means of support (52) are capable of absorbing radiation emitted by the first face of each target which receives the laser beam and of re-emitting this radiation towards this target.

### Claim 7 (depends on 5)

Device according to claim 5, in which the means of support comprise an opening (40, 46) facing each target, this opening being defined by two sidewalls (54, 56), substantially parallel to one another and perpendicular to this target.

### Claim 8 (depends on 5)

Device according to claim 5, in which the means of support comprise an opening facing each target, this opening being defined by two sidewalls (55, 57) which become further apart from one another as they go towards the target.

### Claim 9 (depends on 1)

Device according to claim 1, additionally comprising auxiliary fixed means (58) which are capable of allowing the laser beam (34) to pass in the direction of the target, of absorbing the radiation emitted by the first face of this target and of re-emitting this radiation towards this target.

### Claim 10 (depends on 1)

Device according to claim 1, in which the stack is subdivided into assemblies of at least one pair of first and second layers (76, 78) and the thickness of these assemblies is a monotonic function of the depth in the stack, this depth being counted from the free surface (80) of the stack.

### Claim 11 (depends on 10)

Device according to claim 10, in which the increases in thickness of these assemblies form an arithmetic progression.

### Claim 12 (depends on 10)

Device according to claim 10, in which the first and second layers (76, 78) of each assembly have approximately the seine thickness.

### Claim 13 (depends on 1)

Device according to claim 1, in which the first and second materials are respectively molybdenum and beryllium or molybdenum and silicon.

### Claim 14 (depends on 1)

Device according to claim 1, in which the substrate (74) is made of a material which is chosen from among silicon and germanium.

### Claim 15 (depends on 1)

Device according to claim 1, in which the thickness of the substrate (74) is within the range extending from about 5 mm to about 40 mm and the thickness of the stack is about 1 μm.

### Claim 16 (depends on 1)

Device according to claim 1, in which each multi-layered mirror is fitted with means (92) of cooling this multi-layered mirror to reduce deformation of it when it is illuminated by the extreme ultraviolet radiation.

### Claim 17 (depends on 16)

Device according to claim 16, in which the cooling means (92) are provided in order to cool the multi-layered mirror to a temperature roughly equal to 100 K.

### Claim 18 (depends on 16)

Device according to claim 16, in which the means (92) of cooling the mirror are means of cooling by liquid helium, Freon, liquid nitrogen or a cooling fluid which is a heat transfer fluid at a low temperature close to 0 K.

### Claim 19 (depends on 1)

Device according to claim 1, wherein the sample comprises a semi-conductor substrate (18) on which a layer (20) of photo-sensitive resin is deposited and which is intended to be exposed in accordance with the specified pattern.