Capping layer for EUV optical elements
AssigneeASML Netherlands B.V.
InventorsMandeep Singh, Hugo M. Visser
Life of this patent
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Abstract
Optical elements such as multilayered EUV mirrors are provided with protective capping layers of diamond-like carbon (C), boron nitride (BN), boron carbide (B4C), silicon nitride (Si3N4), silicon carbide (SiC), B, Pd, Ru, Rh, Au, MgF2, LiF, C2F4 and TiN and compounds and alloys thereof. The final period of a multilayer coating may also be modified to provide improved protective characteristics.
Claims38
A lithographic projection apparatus, comprising:
- an illumination system constructed and arranged to supply a projection beam of radiation;
- a first object table provided with a first object holder constructed and arranged to hold a mask;
- a second object table provided with a second object holder constructed and arranged to hold a substrate;
- a projection system constructed and arranged to utilize said radiation to image an irradiated portion of the mask onto a target portion of the substrate;
- and
- at least one of said illumination system and projection system having an optical element with a surface on which radiation is incident and a capping layer covering said surface, said capping layer being formed of a relatively inert material,
- wherein said relatively inert material is selected from the group consisting of:
- diamond-like carbon, Ru, Rh, TiN, MgF2, LiF, C2F4 and compounds and alloys thereof.
Apparatus according to any one of the preceding claims wherein said capping layer has a thickness in the range of from 0.5 nm to 10 nm.
A device manufacturing method using a lithographic apparatus, the method comprising:
- providing a mask containing a pattern to a first object table;
- providing a substrate at least partially covered by a layer of energy-sensitive material to a second object table;
- and
- irradiating said mask and imaging irradiated portions of said pattern onto said substrate;
- said irradiating comprising directing radiation onto a surface of an optical element, the surface having a capping layer formed of a relatively inert material,
- wherein said relatively inert material is selected from the group consisting of:
- diamond-like carbon, Ru, Rh, TiN, MgF2, LiF, C2F4 and compounds and alloys thereof.
A lithographic projection apparatus, comprising:
- an illumination system constructed and arranged to supply a projection beam of radiation;
- a first object table provided with a first object holder constructed and arranged to hold a mask;
- a second object table provided with a second object holder constructed and arranged to hold a substrate;
- a projection system constructed and arranged to utilize said radiation to image an irradiated portion of the mask onto a target portion of the substrate;
- and
- at least one of said illumination system and projection system having a sensor with a surface on which radiation is incident and a capping layer covering said surface, said capping layer being formed of a relatively inert material,
- wherein said relatively inert material is selected from the group consisting of:
- diamond-like carbon (C), Ru, Rh, Au, MgF2, LiF, C2F4, TiN and compounds and alloys thereof.
A lithographic projection apparatus, comprising:
- an illumination system constructed an arranged to supply a projection beam of radiation;
- a first object table provided with a first object holder constructed and arranged to hold a mask;
- a second object table provided with a second object holder constructed and arranged to hold a substrate;
- a projection system constructed and arranged to utilize said radiation to image an irradiated portion of the mask onto a target portion of the substrate;
- and
- at least one of said illumination system and projection system having an optical element with a surface on which radiation is incident and a capping layer covering said surface, said capping layer being formed of a relative inert material,
- wherein said optical element is a reflector having a multilayer reflective coating on which said capping layer is provided;
- and
- wherein said relative inert material is selected from the group consisting of:
- diamond-like carbon (C), boron-nitride (BN), boron carbide (B4C), silicon nitride (Si3N4), silicon carbide (SiC), B, Pd, Ru, Rh, Au, MgF2, LiF, C2F4, TiN and compounds and alloys thereof.
A lithographic projection apparatus, comprising:
- an illumination system constructed and arranged to supply a projection beam of radiation;
- a first object table provided with a first object holder constructed and arranged to hold a mask;
- a second object table provided with a second object holder constructed and arranged to hold a substrate;
- a projection system constructed and arranged to utilize said radiation to image an irradiated portion of the mask onto a target portion of the substrate;
- and
- at least one of said illumination system and projection system having an optical element with a surface on which radiation is incident and a capping layer covering said surface, said capping layer being formed of a relatively inert material,
- wherein said optical element comprises:
- a reflector having a multilayer reflective coating on said surface, said multilayer reflective coating comprising a plurality of layers of a first material having a relatively low refractive index at the wavelength of said projection beam;
- layers of a second material having a relatively high refractive index at said wavelength and alternating with said layers of said first material;
- and
- said capping layer comprises:
- a first sub-layer of said first material;
- a second sub-layer of a third material having a refractive index at said wavelength higher than said first material and being more inert than said second material;
- and
- a third sub-layer formed of a fourth material that is relatively inert, said first, second and third sub-layers being provided in that order with said third sub-layer outermost.
Dependencies are inferred from the claim text.