Solid state image sensor and method for fabricating the same

A method for fabricating a solid state image sensor, comprising the steps of:

• forming a plurality of photodiodes for generating image charges from incident lights;
• forming a plurality of charge coupled devices between the photodiodes for transmitting the image charges in one direction;
• forming a first flat layer on an entire surface of the photodiodes and the charge coupled devices;
• selectively forming a plurality of color filter layers on the first flat layer to be in correspondence to the photodiodes;
• forming a plurality of black layers on the first flat layer between the color filter layers;
• selectively forming a plurality of phase shift layers on the color filter layers to be in correspondence to the photodiodes, alternately;
• forming a second flat layer on an entire surface including the phase shift layers;
• and,
• forming a plurality of microlenses on the second flat layer to be in correspondence to the photodiodes.

A solid state image sensor, comprising:

• a plurality of photodiodes for generating image charges from incident lights:
• a plurality of charge coupled devices provided between the photodiodes for transmitting the image charges in one direction;
• a first flat layer formed on an entire surface of the photodiodes and the charge coupled devices;
• a plurality of color filter layers formed on the first flat layer to be in correspondence to the photodiodes;
• a second flat layer formed on an entire surface including the color filter layers;
• a plurality of microlenses formed on the second flat layer to be in correspondence to the photodiodes;
• a plurality of black layers formed at fixed intervals on a bottom of a glass layer to be in correspondence to the microlenses, wherein the microlenses are formed in the glass layer of a package;
• and,
• a plurality of phase shift layers formed on the bottom of the glass layer to be in correspondence to the photodiodes, alternately.

A method for fabricating a solid state image sensor, comprising the steps of:

• forming a plurality of photodiodes for generating image charges from incident lights;
• forming a plurality of charge coupled devices between the photodiodes for transmitting the image charges in one direction;
• forming a first flat layer on an entire surface of the photodiodes and the charge coupled devices;
• forming a plurality of color filter layers on the first flat layer to be in correspondence to the photodiodes on a one-to-one basis;
• forming a second flat layer on an entire surface including the color filter layers;
• forming a plurality of microlenses on the second flat layer to be in correspondence to the photodiodes;
• forming a plurality of black layers at fixed intervals on a bottom of a glass layer to be in correspondence to the microlenses, wherein the microlenses are formed in the glass layer of a package;
• and
• forming a plurality of phase shift layers on the bottom of the glass layer to be in correspondence to the photodiodes, alternately.

A solid state image sensor, comprising:

• a plurality of photodiodes for generating image charges from incident lights;
• a plurality of charge coupled devices provided between the photodiodes for transmitting the image charges in one direction;
• a gate insulating layer formed on an entire surface of the photodiodes and the charge coupled devices;
• a transfer gate formed on the gate insulating layer over the charge coupled devices;
• an interlayer insulating layer formed on a surface of the transfer gate;
• a metallic shielding layer formed to surround the transfer gate;
• a passivation layer formed on top of the photodiodes;
• a plurality of phase shift layers formed to have a predetermined thickness on the passivation layer and its neighboring metallic shielding layer and to be in correspondence to the photodiodes;
• and,
• a plurality of black layers formed on the metallic shielding layer on both sides of the phase shift layers.

A method for fabricating a solid state image sensor, comprising the steps of:

• forming a plurality of photodiodes for generating image charges from incident lights;
• forming a plurality of charge coupled devices between the photodiodes for transmitting the image charges in one direction;
• forming a gate insulating layer on an entire surface of the photodiodes and the vertical charge coupled devices;
• forming a transfer gate on the gate insulating layer over the charge coupled devices;
• forming an interlayer insulating layer on a surface of the transfer gate;
• forming a metallic shielding layer formed to surround the transfer gate;
• forming a passivation layer on top of the photodiodes;
• forming a plurality of phase shift layers having a predetermined thickness on the passivation layer and its neighboring metallic shielding layer to be in correspondence to the photodiodes;
• and,
• forming a plurality of black layers on the metallic shielding layer on both sides of the phase shift layers.