Variable charge pump circuit with dynamic load

A memory device, comprising:

• an address bus;
• a control circuit;
• a data bus;
• an address decoder coupled to the address bus;
• a read/write circuit coupled to the data bus;
• a memory cell array coupled to the address decoder, control circuit, and read/write circuit;
• and
• a charge pump circuit that generates a boosted output voltage with minimum ripples on an output node coupled to the address decoder, read/write circuit, and memory cell array, the charge pump circuit comprising:
• a) a pumping circuit comprising one or more stages operable to receive a supply voltage and generate one or more pump voltages;
• b) a plurality of loads, each load associated with a specific pump voltage and selectively coupleable to an output of the pump circuit (output pump);
• c) a load selector means coupled to the output pump for selecting a load that satisfies a specific pump voltage;
• d) a target output pump selector sampling the output of the pump circuit for shutting down the variable charge pump circuit whenever the sampled output voltage (vcfra) is greater than or equal to a reference voltage (Vref);
• e) a maximum ripple on target output selector means sampling the output of the pump circuit for adding a load, whenever a maximum ripple on sampled output voltage (Vcfrb) is greater or equal to than the reference voltage (Vref) then the output selector means adds additional loads until the Vcfrb voltage is less than the reference voltage (Vref).

A method for generating an output voltage with minimal ripples in a charge pump circuit, comprising:

• a) selecting a output pump voltage (Vpump);
• b) turning on a load associated with the selected Vpump;
• and
• c) comparing a target output voltage (Vcfra) with a reference voltage (Vref) whenever the target output voltage greater than the reference voltage, disabling the charge pump circuit;
• whenever the target output voltage is less or equal to the voltage reference, leaving the charge pump circuit on.