Load-driving semiconductor device
AssigneeDenso Corporation
InventorHiroshi Imai
Life of this patent
Estimating the term…
Abstract
In a composite IC in which integrated are a power transistor, a bipolar analog circuit and a MOS logic circuit, a load-driving semiconductor device is provided which is capable of certainly placing the power transistor into an off-condition at power-on for stopping the driving of a load. In the semiconductor device, a high-side switch MOS transistor, a charge pump, a bipolar analog circuit, a charge pump driving CMOS logic circuit, a level conversion CMOS logic circuit and a forcibly stopping bipolar transistor 90 are made in the form of an IC, and the forcibly stopping bipolar transistor receives, through its base terminal, a signal which inverts when a drive voltage exceeds a predetermined value to turn to an on-condition. This operation places the bipolar analog circuit into a driving-stopped condition.
Claims12
A load-driving semiconductor device comprising:
- a power transistor connected in series to a load between a power supply and ground;
- a bipolar analog circuit connected between said power supply and a control terminal of said power transistor for adjusting an electric potential at said control terminal of said power transistor;
- a level conversion MOS logic circuit for receiving a drive signal to convert a signal level of said drive signal into a predetermined electric potential for outputting the converted signal level as an input drive signal for said bipolar analog circuit;
- and
- a forcibly stopping bipolar transistor for receiving, at its base terminal, a signal to turn on said forcibly stopping bipolar transistor when a drive voltage exceeds a predetermined value in response to power-on, thereby placing said bipolar analog circuit into a driving-stopped condition.
A load-driving semiconductor device comprising:
- a power transistor connected in series to a load between a power supply and ground;
- a charge pump connected to a control terminal of said power transistor for adjusting an electric potential at said control terminal of said power transistor;
- a bipolar analog circuit connected between said power supply and said charge pump for controlling a supply voltage to said charge pump on the basis of a drive signal;
- a charge pump driving MOS logic circuit for, on the basis of the drive signal, enabling said charge pump conduct a boosting operation;
- a level conversion MOS logic circuit for receiving the drive signal to convert a signal level of said drive signal into a predetermined electric potential for outputting the converted signal level as an input drive signal for said bipolar analog circuit;
- and
- a forcibly stopping bipolar transistor for receiving, at its base terminal, a signal to turn on said forcibly stopping bipolar transistor when a drive voltage exceeds a predetermined value in response to power-on, thereby placing said bipolar analog circuit into a driving-stopped condition.
A load-driving semiconductor device comprising:
- a high-side switch power transistor connected in series to a load between a power supply and ground, said high-side switch power transistor is connected in between the power supply and the load;
- a charge pump connected to a control terminal of said power transistor for adjusting an electric potential at said control terminal of said power transistor;
- a bipolar analog circuit connected between said power supply and said charge pump for controlling a supply voltage to said charge pump on the basis of a drive signal;
- a charge pump driving MOS logic circuit for, on the basis of the drive signal, enabling said charge pump conduct a boosting operation;
- a level conversion MOS logic circuit for receiving the drive signal to convert a signal level of said drive signal into a predetermined electric potential for outputting the converted signal level as an input drive signal for said bipolar analog circuit;
- and
- a forcibly stopping bipolar transistor for receiving, at its base terminal, a signal to turn on said forcibly stopping bipolar transistor when a drive voltage exceeds a predetermined value in response to power-on, thereby placing said bipolar analog circuit into a driving-stopped condition.
Dependencies are inferred from the claim text.