# US 6,724,088 B1 · Quantum conductive barrier for contact to shallow diffusion region

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- Number: US 6,724,088 B1
- Document ID: US6724088B1
- Status: Granted
- Kind: B1
- Application number: 09/295,132
- Filed: 1999-04-20
- Granted: 2004-04-20
- Earliest claimed: 1999-04-20
- Assignees: International Business Machines Corporation
- Inventors: Rajarao Jammy; Jack A. Mandelman
- Web page: https://patentgrep.com/patent/US6724088B1

## CPC

- H10W 20/033: {in openings in dielectrics}
- H10D 62/165: {Tunnel injectors}
- H10W 20/40: Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10D 30/60: Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

Structures such as source/drain contacts of improved reliability are enabled by the creation and use of quantum conductive barrier layers at the interface between the electrical contact and the shallow diffusion source/drain region. The quantum conductive layers are preferably nitrides or oxynitrides. The improved structure is preferably part of a transistor structure of an integrated circuit device. The contacts structures are especially useful for devices employing ultra-shallow junctions.

## Claims

### Claim 1

A structure on a semiconductor substrate, said structure comprising (a) a shallow doped region in said substrate, and (b) a doped polysilicon electrical contact to said shallow doped region, wherein said structure further comprises (c) a quantum conductive barrier layer between said doped region and said electrical contact, said doped region being electrically connected to said electrical contact through said quantum conductive barrier layer.

### Claim 2 (depends on 1)

The structure of claim 1 wherein said shallow doped region is a source or drain for a transistor.

### Claim 3 (depends on 1)

The structure of claim 1 wherein said shallow doped region has a depth of about 20-50 nm.

### Claim 4 (depends on 1)

The structure of claim 1 wherein said quantum conductive barrier layer consists of a material selected from the group consisting of silicon nitride, silicon oxynitride, alumina, germanium oxide and yttria-stabilized zirconia.

### Claim 5 (depends on 4)

The structure of claim 4 wherein said quantum conductive barrier layer consists of a material selected from the group consisting of silicon nitride, silicon oxynitride.

### Claim 6 (depends on 1)

The structure of claim 1 wherein said quantum conductive layer has a thickness of less than about 50 Å.

### Claim 7 (depends on 1)

The structure of claim 1 wherein said quantum conductive layer has a thickness of about 5-30 Å.

### Claim 8 (depends on 1)

The structure of claim 1 wherein said quantum conductive barrier layer consists of a material having a bulk resistivity of at least about 106 ohm-m.

### Claim 9 (depends on 1)

The structure of claim 1 wherein said quantum conductive barrier layer consists of a material having a bulk resistivity of at least about 1011 ohm-m.