# US 6,724,079 B2 · Wire bond-less electronic component for use with an external circuit and method of manufacture

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- Number: US 6,724,079 B2
- Document ID: US6724079B2
- Status: Granted
- Kind: B2
- Application number: 10/039,800
- Filed: 2002-01-04
- Published: 2003-07-10
- Granted: 2004-04-20
- Earliest claimed: 2002-01-04
- Assignees: Motorola, Inc.
- Inventors: Lakshminarayan Viswanathan; Pierre-Marie Piel; Garry D. Funk; Robert Paul Davidson
- Web page: https://patentgrep.com/patent/US6724079B2

## CPC

- H10W 76/60: Seals
- H10W 44/20: at high-frequency [HF] or radio frequency [RF]
- H10W 76/15: Containers comprising an insulating or insulated base
- H10W 72/07251: {characterised by changes in properties of the bump connectors during connecting}
- H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W 72/877: {Bump connectors and die-attach connectors}
- H10W 76/63: characterised by their shape or disposition, e.g. between cap and walls of a container
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A wire bond-less electronic component is for use with a circuit external to the wire bond-less electronic component. The wire bond-less electronic component includes a support substrate (110, 410), an electronic device (130) over the support substrate, and a cover (140, 440, 540) located over the electronic device and the support substrate. The cover includes an interconnect structure (141, 441, 541) electrically coupled to the electronic device and adapted to electrically couple together the electronic device and the circuit for providing impedance transformation of an electrical signal between the electronic device and the circuit.

## Claims

### Claim 1

A wire bond-less electronic component for use with a circuit external to the wire bond-less electronic component, the wire bond-less electronic component comprising:
a metal support substrate;
an electronic device over the support substrate; and
a cover located over the electronic device and the support substrate and comprising:
an interconnect structure electrically coupled to the electronic device and adapted to electrically couple together the electronic device and the circuit for providing impedance transformation of an electrical signal between the electronic device and the circuit.

### Claim 2 (depends on 1)

The wire bond-less electronic component of claim 1 wherein:
the interconnect structure is located within the cover.

### Claim 3 (depends on 1)

The wire bond-less electronic component of claim 1 wherein:
the interconnect structure is located at a surface of the cover.

### Claim 4 (depends on 1)

The wire bond-less electronic component of claim 1 further comprising:
electrical leads located adjacent to the cover,
wherein:
the interconnect structure electrically couples together the electronic device and the electrical leads; and
the electrical leads electrically couple together the interconnect structure and the circuit.

### Claim 5 (depends on 1)

The wire bond-less electronic component of claim 1 wherein:
the wire bond-less electronic component is a surface mount device.

### Claim 6 (depends on 1)

The wire bond-less electronic component of claim 1 wherein:
the cover is self-aligned to the support substrate.

### Claim 7 (depends on 1)

The wire bond-less electronic component of claim 1 wherein:
the electronic device is located in a device substrate; and
the cover is self-aligned to the device substrate.

### Claim 8 (depends on 1)

The wire bond-less electronic component of claim 1 wherein:
the impedance transformation provided by the interconnect structure comprises:
a zero inductance ground potential for the electronic device.

### Claim 9 (depends on 8)

The wire bond-less electronic component of claim 8 further comprising:
an electrical terminal at least partially located over the cover,
wherein:
the electrical terminal is electrically coupled to a portion of the interconnect structure providing the zero inductance ground potential.

### Claim 10 (depends on 9)

The wire bond-less electronic component of claim 9 wherein:
the cover comprises an outer perimeter; and
the portion of the interconnect structure providing the zero inductance ground potential is located adjacent to the outer perimeter of the cover.

### Claim 11 (depends on 1)

The wire bond-less electronic component of claim 1 wherein:
the interconnect structure comprises:
a matching network.

### Claim 12 (depends on 1)

The wire bond-less electronic component of claim 1 wherein: the interconnect structure comprises:
a first portion comprising a direct current bias circuit; and
a second portion comprising an impedance transformation circuit.

### Claim 13 (depends on 1)

The wire bond-less electronic component of claim 1 wherein:
the interconnect structure comprises:
a combining manifold.

### Claim 14 (depends on 1)

The wire bond-less electronic component of claim 1 wherein:
the interconnect structure provides harmonic termination of the electrical signal between the electronic device and the circuit.

### Claim 15 (depends on 1)

The wire bond-less electronic component of claim 1 further comprising:
an additional electronic device over the support substrate, under the cover, adjacent to the electronic device, and electrically coupled to the interconnect structure.

### Claim 16 (depends on 1)

The wire bond-less electronic component of claim 1 wherein:
the interconnect structure is a multi-layer interconnect structure.

### Claim 17 (depends on 1)

The wire bond-less electronic component of claim 1 further comprising:
an electrically floating portion located within the cover.

### Claim 18

A wire bond-less electronic component for use with a circuit external to the wire bond-less electronic component, the wire bond-less electronic component comprising:
a metal flange;
a semiconductor substrate supported by the flange;
a semiconductor device supported by the semiconductor substrate; and
a lid located over the semiconductor device, the semiconductor substrate, and the flange, the lid comprising:
a multi-functional interconnect system electrically coupled to the semiconductor device and electrically coupling together the semiconductor device and the circuit for providing a direct current to the semiconductor device and for providing impedance transformation of electrical signals from the semiconductor device to the circuit and from the circuit to the semiconductor device.

### Claim 19 (depends on 18)

The wire bond-less electronic component of claim 18 wherein:
the multi-functional interconnect system is embedded in the lid.

### Claim 20 (depends on 18)

The wire bond-less electronic component of claim 18 wherein:
the multi-functional interconnect system is located below and adjacent to a bottom surface of the lid.

### Claim 21 (depends on 18)

The wire bond-less electronic component of claim 18 wherein:
the lid is self-aligned to the flange.

### Claim 22 (depends on 18)

The wire bond-less electronic component of claim 18 wherein:
the lid is self-aligned to the semiconductor substrate.

### Claim 23 (depends on 18)

The wire bond-less electronic component of claim 18 wherein:
the multi-functional interconnect system comprises:
a direct current bias circuit for providing the direct current to the semiconductor device, and
an impedance transformation circuit for providing the impedance transformation of the electrical signals from the semiconductor device to the circuit and from the circuit to the semiconductor device; and
a power combining manifold.

### Claim 24 (depends on 23)

The wire bond-less electronic component of claim 23 wherein:
the direct current bias circuit is entirely separate from the impedance transformation circuit.

### Claim 25 (depends on 23)

The wire bond-less electronic component of claim 23 wherein:
the impedance transformation circuit further provides harmonic termination of the electrical signals from the semiconductor device to the circuit and from the circuit to the semiconductor device.