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AssigneeHamamatsu Photonics K.K.
InventorsHiroshi Akahori, Hisanori Suzuki, Kazuhisa Miyaguchi, Masaharu Muramatsu, Koei Yamamoto
Estimating the term…
A semiconductor energy detector as disclosed herein is arranged so that an aluminum wiring pattern is formed on the front side of transfer electrodes of a CCD vertical shift register, which pattern includes meander-shaped auxiliary wirings for performing auxiliary application/supplement and additional wirings for performing auxiliary supplement of transfer voltages in a way independent of the auxiliary wirings with respective ones of such wirings being connected to corresponding transfer electrodes to thereby avoid a problem as to lead resistivities at those transfer electrodes made of polycrystalline silicon, thus achieving the intended charge transfer at high speeds with high efficiency.
A semiconductor energy detector having on a surface side of a CCD a group of transfer electrodes with a charge transfer voltage being applied thereto, comprising auxiliary wirings for connection of some of said electrodes,
A semiconductor energy detector having on a surface side of a CCD a group of transfer electrodes with a charge transfer voltage being applied thereto, comprising auxiliary wirings for connection of some of said electrodes,
Dependencies are inferred from the claim text.