US 6,724,057 B2 · Semiconductor device with reduced short circuiting between gate electrode and source/drain region

Abstract

A semiconductor device capable of effectively preventing defective short-circuiting across a gate electrode and an impurity region and reducing the resistance of the gate electrode and the impurity region is provided. In this semiconductor device, a first gate film is formed on a channel region through a gate insulator film. A second gate film consisting of a first compound layer is formed on the first gate film. A second compound layer is formed on the surface of the impurity region. A reaction preventing film for preventing the first compound layer and the second compound layer from reacting with each other is formed on the second gate film. The first and second compound layers are formed independently of each other without reaction in the process of formation due to the reaction preventing film. Thus, defective short-circuiting across the gate electrode and the impurity region is effectively prevented while process tolerance is increased.

Claims4

Dependent claims

A semiconductor device comprising:

a pair of impurity regions formed on the main surface of a semiconductor substrate at a prescribed interval to hold a channel region therebetween;
a first gate film formed on said channel region through a gate insulator film;
a second gate film consisting of a first metal silicide layer formed on said first gate film;
a second layer of a metal silicide formed on the surfaces of said impurity regions;
and
a conductive reaction preventing film formed on said second gate film for preventing reaction between said first metal silicide layer and said second metal silicide layer, but not on the surfaces of said impurity regions, wherein
said conductive reaction preventing film includes a conductive film consisting of a material selected from the group consisting of a high melting point Si compound and a high melting point metal compound.

4 more elements

Dependencies are inferred from the claim text.

Semiconductor device with reduced short circuiting between gate electrode and source/drain region

Life of this patent

Semiconductor device with reduced short circuiting between gate electrode and source/drain region

Life of this patent

Abstract

Claims4