Field-effect transistors with high-sensitivity gates
AssigneeLucent Technologies Inc.
InventorsGirsh Blumberg, Peter B. Littlewood
Life of this patent
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Abstract
A field-effect transistor (FET) includes a source electrode, a drain electrode, a gate electrode, a gate dielectric, and a semiconductor layer that functions as an active channel of the transistor. The active channel is configured to carry a current between the source and drain electrodes and has a conductivity responsive to voltages applied the gate electrode. The gate dielectric is located between the gate electrode and the semiconductor layer and includes a quasi-1D charge or spin density wave material.
Claims17
A field-effect transistor, comprising:
- gate, source, and drain electrodes;
- a semiconductor layer being located to function as an active channel of the transistor, the active channel being configured to carry a current between the source and drain electrodes and having a conductivity responsive to voltages applied the gate electrode;
- and
- a gate dielectric comprising a quasi-1D charge or spin density wave material and being located between the gate electrode and the semiconductor layer.
A field effect transistor, comprising:
- gate, source, and drain electrodes;
- a semiconductor layer configured to function as an active channel of the field-effect transistor, the active channel being able to conduct a current between the source and drain electrodes;
- a gate dielectric comprising a cuprate ladder material and being located between the gate electrode and the semiconductor layer.
A method of operating a field-effect transistor, the transistor having a gate electrode, a source electrode, a drain electrode, and an active semiconductor channel, the method comprising:
- establishing a current flow in the active semiconductor channel by applying a voltage across the source and drain electrodes;
- and
- changing the current flow by adjusting a gate voltage such that an electric field strength changes in a charge or spin density wave material located between the channel and the gate electrode.
Dependencies are inferred from the claim text.