PMOSFET device with localized nitrogen sidewall implantation

A p-type metal oxide semiconductor field effect transistor (PMOSFET) device fabricated on a silicon substrate, comprising:

• a source, a gate, a drain, and an N-well positioned under the gate and separating the source from the drain and forming an active area;
• sidewalls of insulating material surrounding said active area and forming an isolation layer;
• a channel under said gate, coupling said source to said drain to allow channel conduction from the source to the drain;
• and
• a localized nitrogen implanted layer positioned only along the edges separating the isolation layer from the active area and underneath said channel at both interface sides of said active area that are parallel to the channel, said localized nitrogen layer extending from an exposed area of said drain to at least an exposed area of said source, said localized nitrogen implanted layer positioned at the edges underneath only a portion of front and back surfaces of said gate, leaving the region defined by said source and said drain substantially free of said localized nitrogen implanted layer, said PMOSFET being substantially immune to sidewall corner interface hot carrier induced instability.