US 6,724,052 B2 · Semiconductor device and method of fabricating a semiconductor device

Abstract

A semiconductor device includes a substrate of a first conductive type, and a well region of an opposite second conductive type is formed in the substrate. A first impurity region of the first conductive type extends to a first depth within the well region, and a second impurity region of the first conductive type is spaced from the first impurity region to define a channel region therebetween and extends to a second depth within the well region. Preferably, the second depth is greater than the first depth. A gate electrode is located over the channel region, and a silicide layer is formed at a third depth within the first impurity region. The third depth is less than the first depth, and a difference between the first depth and the third depth is less than or equal to a difference at which a leakage current from the silicide layer to the well region is sufficient to electrically bias the well region through the silicide layer.

Claims40

Dependent claims

A semiconductor device comprising:

a substrate of a first conductive type;
a well region of a second conductive type formed in the substrate, wherein the second conductive type is opposite the first conductive type;
a first impurity region of the first conductive type extending to a first depth within the well region;
a second impurity region of the first conductive type spaced from the first impurity region to define a channel region therebetween and extending to a second depth within the well region;
a gate electrode located over the channel region;
a silicide layer formed at a third depth within the first impurity region, wherein the third depth is less than the first depth, and wherein a difference between the first depth and the third depth is less than or equal to a difference at which a leakage current from the silicide layer to the well region is sufficient to electrically bias the well region through the silicide layer.

3 more elements

A semiconductor device comprising:

a substrate of a first conductive type;
a well region of a second conductive type formed in the substrate, wherein the second conductive type is opposite the first conductive type;
first and second voltage nodes;
a first transistor comprising (a) a first impurity region of the first conductive type extending to a first depth within the well region, (b) a second impurity region of the first conductive type spaced from the first impurity region to define a channel region therebetween and extending to a second depth within the well region, (c) a gate electrode located over the channel region, and (d) a silicide layer connected to the first voltage node and formed at a third depth within the first impurity region, wherein the third depth is less than the first depth, and wherein a difference between the first depth and the third depth is less than or equal to a difference at which a leakage current from the silicide layer to the well region is sufficient to electrically bias the well region through the silicide layer;
and
a second transistor comprising (a) a first impurity region of the second conductive type extending to a first depth within the substrate, (b) a second impurity region of the second conductive type spaced from the first impurity region to define a channel region therebetween and extending to a second depth within the substrate, (c) a gate electrode located over the channel region, and (d) a silicide layer connected to the second voltage node and formed at a third depth within the first impurity region, wherein the third depth is less than the first depth, and wherein a difference between the first depth and the third depth is less than or equal to a difference at which a leakage current from the silicide layer to the substrate is sufficient to electrically bias the substrate through the silicide layer.

3 more elements

A semiconductor device comprising:

a substrate of a first conductive type;
a well region of a second conductive type formed in the substrate, wherein the second conductive type is opposite the first conductive type;
first and second voltage nodes;
a first transistor comprising (a) a first impurity region of the first conductive type extending to a first depth within the well region, (b) a second impurity region of the first conductive type spaced from the first impurity region to define a channel region therebetween and extending to a second depth within the well region, (c) a gate electrode located over the channel region, and (d) a silicide layer connected to the first voltage node and formed within the first impurity region and including protrusions extending downwardly from the bottom surface thereof and across a boundary between the first impurity region and the well region;
and
a second transistor comprising (a) a first impurity region of the second conductive type extending to a first depth within the substrate, (b) a second impurity region of the second conductive type spaced from the first impurity region to define a channel region therebetween and extending to a second depth within the substrate, (c) a gate electrode located over the channel region, and (d) a silicide layer connected to the second voltage node and formed within the first impurity region and including protrusions extending downwardly from the bottom surface thereof and across a boundary between the first impurity region and the substrate.

3 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method of fabricating a semiconductor device

Life of this patent

Semiconductor device and method of fabricating a semiconductor device

Life of this patent

Abstract

Claims40