# US 6,724,049 B2 · SOI semiconductor device with insulating film having different properties relative to the buried insulating film

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- Number: US 6,724,049 B2
- Document ID: US6724049B2
- Status: Granted
- Kind: B2
- Application number: 10/287,508
- Filed: 2002-11-05
- Published: 2003-06-05
- Granted: 2004-04-20
- Earliest claimed: 2001-11-30
- Assignees: Kabushiki Kaisha Toshiba
- Inventors: Makoto Fujiwara
- Web page: https://patentgrep.com/patent/US6724049B2

## CPC

- H10D 30/0323: {comprising monocrystalline silicon}
- H10D 30/6713: {characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes}
- H10D 30/6715: {characterised by the doping profiles, e.g. having lightly-doped source or drain extensions}
- H10D 30/6737: {characterised by the electrode materials}
- H10D 30/6743: {Silicon}
- H10D 30/6758: {characterised by the insulating substrates}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor device comprising a source region, a drain region, and a buried insulating film. The buried insulating film is composed of a first part lying below the source and drain region, and a second part lying below the space between the source and drain regions. The first part of the buried insulating film is thicker than the second part. The bottoms of the source and drain regions contact the first part of the buried insulating film.

## Claims

### Claim 1

A semiconductor device comprising:
an element-forming layer formed on a buried insulating film of a semiconductor substrate;
a gate insulating film formed on the element-forming layer;
a gate electrode formed on the gate insulating film;
a source region and a drain region formed in the element-forming layer, corresponding to two sides of the gate electrode, respectively, and lying at a level higher than a surface of the element-forming layer; and
an insulating film distinct from the buried insulating film and formed on a first part of the buried insulating film, which lies below the source and drain regions, said insulating film contacting bottom surfaces of the source and drain regions,
wherein the element-forming layer has a first part and a second part, the first part of the element-forming layer corresponds to the source and drain regions, the second part of the element-forming layer is located below the gate electrode and is thicker than the first part, and the source and drain regions have bottom surfaces that contact the insulating film.

### Claim 2 (depends on 1)

The device according to claim 1, wherein the second part of the element-forming layer forms a partially depleted element.

### Claim 3 (depends on 2)

The device according to claim 2, wherein the element-forming layer has a floating potential.

### Claim 4 (depends on 1)

The device according to claim 1, further comprising:
an extension region formed in parts of the element-forming layer that lie on sides of the gale electrode, respectively, connected to the source and drain regions and having an impurity concentration lower than that of the source and drain regions; and
a sidewall insulating film formed on the sides of the gate electrode and lying above the source and drain regions.

### Claim 5 (depends on 1)

The device according to claim 1, wherein said insulating film includes a silicon nitride film and a silicon dioxide film.

### Claim 6 (depends on 1)

The device according to claim 1, wherein the insulating film is different than the buried insulating film in a chemical composition.