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US 6,724,040 B2Granted
Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorTatsuhiko Fujihira
Life of this patent
Estimating the term…
Abstract
A semiconductor device has a drift region in which a drift current flows if it is in the ON mode and which is depleted if it is in the OFF mode. The drift region is formed as a structure having a plurality of first conductive type divided drift regions and a plurality of second conductive type compartment regions in which each of the compartment regions is positioned among the adjacent drift regions in parallel to make p-n junctions, respectively.
Claims14
An MIS type semiconductor device which comprises:
- a second conductivity type semiconductor substrate layer,
- a first conductivity type diffusion layer on the top of said second conductivity type semiconductor substrate layer;
- a second conductivity type drift path region on the top of said first conductivity type diffusion layer;
- a first conductivity type compartment region on the top of said second conductivity type drift path region;
- a second conductivity type drain region in contacts with said second conductivity type drift path region;
- a second conductivity type source region spaced apart from said second conductivity type drift path region by part of said first conductivity type diffusion layer;
- and
- a gate electrode provided via a gate insulation film on the surface of the first conductivity type diffusion layer between the drift path region and the source region,
- wherein a drift current shall flow in a lateral direction.
6 more elements
An MIS type semiconductor device which comprises:
- a semiconductor substrate layer,
- a second conductivity type drift path region on the top of said first conductivity type diffusion layer;
- a first conductivity type compartment region on the top of said second conductivity type drift path region;
- a second conductivity type drain region in contact with said second conductivity type drift path region;
- a second conductivity type source region separated from said second conductivity type drift path region by a first conductivity type area;
- and
- a gate electrode provided between said drift path region and said source region.
4 more elements
An MIS type semiconductor device which comprises:
- a semiconductor substrate layer,
- a first conductivity type diffusion layer on the top of said semiconductor substrate layer;
- a second conductivity type drift path region on the top of said first conductivity type diffusion layer;
- a first conductivity type compartment region on the top of said second conductivity type drift path region and having a contact area in contact with said first conductivity type diffusion layer;
- a second conductivity type drain region in contact with said second conductivity type drift path region;
- a second conductivity type source region separated from said second conductivity type drift path region via said contact area;
- and
- a gate electrode provided between said drift path region and said source region.
5 more elements
Dependencies are inferred from the claim text.