Semiconductor integrated circuit device and manufacturing method which avoids oxidation of silicon plug during thermal treatment of capacitor insulating film

A semiconductor integrated circuit device, comprising:

• a first insulating film formed over a main surface of a semiconductor substrate and having a first connection hole in which a first conductive layer is buried;
• a second insulating film formed over the first insulating film and having a trench over the first connection hole;
• and
• a capacitor formed in the trench,
• wherein the capacitor comprises a lower electrode constituted by a second conductive layer formed over a sidewall and bottom surface of the trench;
• a capacitor insulating film formed over the lower electrode;
• and an upper electrode constituted by a third conductive layer formed over the capacitor insulating film, and
• a metal silicide layer electrically connected to the first conductive layer in the first connection hole is provided between the sidewall and bottom surface of the trench and the lower electrode,
• wherein a fourth conductive layer made of polycrystalline silicon is further formed between the sidewall and bottom surface of the trench and the metal silicide layer, and
• wherein the metal silicide layer and the capacitor insulating film are contacted to each other at an upper end of the trench.

A semiconductor integrated circuit device, comprising:

• a first insulating film formed over a main surface of a semiconductor substrate and having a first connection hole in which a first conductive layer is buried;
• a second insulating film formed over the first insulating film and having a trench over the first connection hole;
• and
• a capacitor formed in the trench,
• wherein the capacitor comprises a lower electrode constituted by a second conductive layer formed over a sidewall and bottom surface of the trench;
• a capacitor insulating film formed over the lower electrode;
• and an upper electrode constituted by a third conductive layer formed over the capacitor insulating film,
• a metal silicide layer electrically connected to the first conductive layer in the first connection hole is provided between the sidewall and bottom surface of the trench and the lower electrode, and
• an upper end of the metal suicide layer over the sidewall of the trench terminates at a position lower than the upper end of the trench, and thus, the metal silicide layer and the capacitor insulating film are not contacted to each other,
• wherein a fourth conductive layer made of polycrystalline silicon is further formed between the sidewall and bottom surface of the trench and the metal silicide layer.

A semiconductor integrated circuit device, comprising:

• a first insulating film formed over a main surface of a semiconductor substrate and having a first connection hole in which a silicon plug is buried;
• a second insulating film formed over the first insulating film and having a trench over the first connection hole;
• and
• a capacitor formed in the trench,
• wherein the capacitor comprises a lower electrode constituted by a second conductive layer formed over a sidewall and bottom surface of the trench;
• a capacitor insulating film formed over the lower electrode;
• and an upper electrode constituted by a third conductive layer formed over the capacitor insulating film,
• a metal silicide layer electrically connected to the silicon plug in the first connection hole is provided between the sidewall and bottom surface of the trench and the second conductive layer, and
• a part of the second conductive layer is formed so as to cover an end portion of the metal silicide layer, and to contact to a sidewall of the trench,
• wherein a polycrystalline silicon layer is formed between the second conductive layer and the sidewall and bottom surface of the trench.

A semiconductor integrated circuit device, comprising:

• a first insulating film formed over a main surface of a semiconductor substrate and having a first connection hole in which a first conductive layer is buried;
• a second insulating film formed over the first insulating film and having a trench over the first connection hole;
• and
• a capacitor formed in the trench,
• wherein the capacitor comprises a lower electrode constituted by a second conductive layer containing organic matters or oxygen and formed over a sidewall and bottom surface of the trench;
• a capacitor insulating film formed over the lower electrode;
• and an upper electrode constituted by a third conductive layer formed over the capacitor insulating film, and
• a metal silicide layer electrically connected to the first conductive layer in the first connection hole is provided between the sidewall and bottom surface of the trench and the lower electrode,
• wherein a polycrystalline silicon layer is formed between the second conductive layer and the sidewall and bottom surface of the trench.