# US 6,724,030 B2 · System and method for back-side contact for trench semiconductor device characterization

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- Number: US 6,724,030 B2
- Document ID: US6724030B2
- Status: Granted
- Kind: B2
- Application number: 10/051,544
- Filed: 2002-01-18
- Published: 2003-07-24
- Granted: 2004-04-20
- Earliest claimed: 2002-01-18
- Assignees: Infineon Technologies North American Corp.
- Inventors: Klaus Hummler
- Web page: https://patentgrep.com/patent/US6724030B2

## CPC

- H10W 20/023: {the interconnections being through-semiconductor vias}
- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10B 12/038: {the capacitor being in a trench in the substrate}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A method for forming a back-side contact for a vertical trench device includes grinding a back-side of a semiconductor substrate, milling a trench in the back-side of the semiconductor substrate, wherein a vertical trench fill is exposed, and depositing a conductive material, wherein the conductive material shorts the vertical trench fill to a buried plate. Grinding the back-side of the semiconductor substrate further includes grinding a dimple beneath a portion of the vertical trench device, wherein the trench is milled in the bottom portion of the dimple.

## Claims

### Claim 1

A memory device having an accessible source such that device parameters can be determined, comprising:
a dimple ground into a back-side of a semiconductor substrate of the device;
a trench milled from the bottom portion of the dimple exposing a portion of a vertical trench fill; and
a conductive material connecting the vertical trench fill and a buried plate of the device, wherein the conductive material is a layer covering a portion of the back-side of the semiconductor substrate.

### Claim 2 (depends on 1)

The system of claim 1, wherein the trench is milled into a portion of the vertical trench fill and the buried plate.

### Claim 3 (depends on 1)

The system of claim 1, wherein the conductive material is a back-side electrode.

### Claim 4 (depends on 1)

The system of claim 1, wherein a macro design of the memory device is substantially similar to a product line macro design.

### Claim 5 (depends on 4)

The system of claim 4, wherein the memory device dimensions are substantially the same as those of the product line macro design.