US 6,724,018 B2 · Zn1-xMgxSySe1-y pin-photodiode and Zn1-xMgxSySe1-y avalanche-photodiode

Abstract

A blue-violet-near-ultraviolet pin-photodiode with small dark current, high reliability and long lifetime. The pin-photodiode has a metallic n-electrode, a n-ZnSe single crystal substrate, an optionally added n-ZnSe buffer layer, an n-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, a p-Zn1-xMgxSySe1-y layer, a p-(ZnTe/ZnSe)m SLE, a p-ZnTe contact layer, an optionally provided antireflection film and a metallic p-electrode. A blue-violet-near-ultraviolet avalanche photodiode with small dark current, high reliability and long lifetime. The avalanche photodiode has a metallic n-electrode, a n-ZnSe single crystal substrate, an optionally added n-ZnSe buffer layer, an n-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, a p-Zn1-xMgxSySe1-y layer, a p-(ZnTe/ZnSe)m SLE, a p-ZnTe contact layer, an optionally provided antireflection film and a metallic p-electrode. Upper sides of the layered structure are etched into a mesa-shape and coated with insulating films.

Claims22

Dependent claims

A Zn1-xMgxSySe1-y pin-photodiode comprising:

an n-ZnSe single crystal substrate;
an n-Zn1-xMgxSySe1-y (0≦x≦0.8;0≦y≦0.8) layer epitaxially grown either directly upon the n-ZnSe substrate or via an n-ZnSe buffer layer piled upon the n-ZnSe substrate;
an i-Zn1-xMgxSySe1-y (0≦x≦0.8;0≦y≦0.8) layer epitaxially grown the n-Zn1-xMgxSySe1-y layer;
a p-Zn1-xMgxSySe1-y (0≦x≦0.8;0≦y≦0.8) layer having a bandgap equal to or wider than a bandgap of the i-Zn1-xMgxSySe1-y layer;
a p-(ZnTe/ZnSe)m superlattice electrode which is made by piling p-ZnTe thin films and p-ZnSe thin films reciprocally;
a metallic p-electrode formed upon the p-(ZnTe/ZnSe)m superlattice electrode;
and
a metallic n-electrode formed on the bottom of the n-ZnSe substrate.

5 more elements

Dependencies are inferred from the claim text.

Zn1-xMgxSySe1-y pin-photodiode and Zn1-xMgxSySe1-y avalanche-photodiode

Life of this patent

Zn1-xMgxSySe1-y pin-photodiode and Zn1-xMgxSySe1-y avalanche-photodiode

Life of this patent

Abstract

Claims22