# US 6,724,011 B2 · Display device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 6,724,011 B2 - Document ID: US6724011B2 - Status: Granted - Kind: B2 - Application number: 09/518,321 - Filed: 2000-03-03 - Published: 2002-12-26 - Granted: 2004-04-20 - Earliest claimed: 1999-03-05 - Assignees: Sanyo Electric Co., Ltd. - Inventors: Yasuo Segawa; Keiichi Sano; Kazuto Noritake - Web page: https://patentgrep.com/patent/US6724011B2 ## CPC - H10D 30/6734: {having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs} - G02F 1/136227: {Through-hole connection of the pixel electrode to the active element through an insulation layer} - G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} - H10D 30/6733: {Multi-gate TFTs} - H10D 86/00: Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates - G02F 2203/02: reflective - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS ## Abstract A display device in which variations of characteristics of a TFT are eliminated and the aperture ratio is improved is provided. A display device has a thin film transistor on an insulating substrate 10. The thin film transistor includes first gate electrodes 11, a gate insulating film 12, a semiconductor film 13 which is formed on the first gate electrode 11, and a interlayer insulating film 15. The thin film transistor further includes second gate electrodes 70 which are on the interlayer insulating film 15 and at least above channels 13c, and which are connected to the first gate electrodes 11. A reflective display electrode 19 connected to the source of the thin film transistor is elongated to extend above the thin film transistor. ## Claims ### Claim 1 A display device in which a thin film transistor is disposed on an insulative substrate, said thin film transistor comprising: a first gate electrode; a gate insulating film; a semiconductor film which is formed on said gate insulating film and which has a channel; a insulating film; a display electrode connected to a source which is formed in said semiconductor film, said display electrode being elongated so as to extend above said channel of said thin film transistor, wherein a second gate electrode formed between said first gate electrode and said display electrode; a light emitting layer formed on said display electrode, wherein said display electrode is an electrode used in an organic electro luminescent device; and at least one pixel, wherein each pixel comprises the thin transistor and a second thin film transistor, wherein the display electrode is extended above the thin film transistor but not extended above said second thin film transistor. ### Claim 2 (depends on 1) A display device according to claim 1, wherein said channel is covered with a stopper insulating film. ### Claim 3 (depends on 2) A display device according to claim 2, wherein said stopper insulating film is made of an SiO2 film. ### Claim 4 (depends on 2) A display device according to claim 2, wherein said stopper insulating film is made of a two-layered film of SiN and organic film. ### Claim 5 (depends on 1) A display device according to claim 1, wherein said first gate electrode is a double gate structured electrode divided above the channel. ### Claim 6 (depends on 5) A display device according to claim 5, wherein said second gate electrode is a double gate structured electrode divided corresponding to said first gate electrode. ### Claim 7 (depends on 1) A display device according to claim 1, wherein said display electrode is a reflective display electrode which is made of a reflective material. ### Claim 8 (depends on 7) A display device according to claim 7, wherein said reflective display electrode is made of Al—Nd alloy. ### Claim 9 (depends on 1) The display device according to claim 1, further comprising an electrode connected to the gate electrode, wherein the electrode connected to the gate electrode is provided between the display electrode and the thin film transistor but not provided on or under the second thin film transistor. ### Claim 10 A display device in which a thin film transistor is disposed on an insulative substrate, said thin film transistor comprising: a first gate electrode; a gate insulating film; a semiconductor film which is formed on said gate insulating film and which has a channel; a insulating film; a display electrode connected to a source which is formed in said semiconductor film, said display electrode being elongated so as to extend above said channel of said thin film transistor, wherein a second gate electrode formed between said first gate electrode and said display electrode, and wherein said second gate electrode is connected with said first gate electrode; a light emitting layer formed on said display electrode, wherein said display electrode is an electrode used in an organic electro luminescent device; and at least one pixel; wherein each pixel comprises the thin film transistor and a second thin film transistor, wherein the display electrode is extended above the thin film transistor bat not extended above said second thin film transistor. ### Claim 11 (depends on 10) A display device according to claim 10, wherein said second gate electrode is formed so as to be faced with said first gate electrode through said insulating film. ### Claim 12 (depends on 11) A display device according to claim 11, wherein said display electrode is rectangular. ### Claim 13 (depends on 10) The display device according to claim 10, further comprising an electrode connected to the gate electrode, wherein the electrode connected to the gate electrode is provided between the display electrode and the thin film transistor but not provided on or under and the second thin film transistor. ### Claim 14 A display device in which a thin film transistor is disposed on an insulative substrate, said thin film transistor comprising: a first gate electrode; a gate insulating film; a semiconductor film which is formed on said gate insulating film and which has a channel; a insulating film; a display electrode connected to a source which is formed in said semiconductor film, said display electrode being elongated so as to extend above said channel of said thin film transistor, wherein a second gate electrode formed between said first gate electrode and said display electrode, and wherein said display electrode is an electrode used in an organic electro luminescent device; a light emitting layer formed on said display electrode; and at least one pixel, wherein each pixel comprises the thin film transistor and a second thin film transistor, wherein the display electrode is extended above the thin film transistor but not extended above said second thin film transistor but not extended above the said second thin film transistor. ### Claim 15 (depends on 14) The display device according to claim 14, further comprising an electrode connected to the gate electrode, wherein the electrode connected to the gate electrode is provided between the display electrode and the thin film transistor but not provided on or under the second thin film transistor. ### Claim 16 A display device comprising: an insulative substrate; a thin film transistor including ante electrode, a gate insulating film and a channel region; a display electrode connected to one of a source region of the thin film transistor and a drain region of the thin film transistor, said display electrode being extended above the channel region of the thin film transistor; and electrode provided between the channel region of the thin film transistor and the display electrode, wherein the electrode is connected to the gate electrode; a light emitting layer formed on said display electrode, wherein said display electrode is an electrode used in an organic electro luminescent device; and at least one pixel, wherein each pixel comprises the thin film transistor and a second thin film transistor, wherein the display electrode is extended above the thin film transistor but not extended above said second thin film transistor. ### Claim 17 (depends on 16) The display device according to claim 16, wherein the display electrode is a reflective display electrode made of a reflective material. ### Claim 18 (depends on 16) The display device according to claim 16, wherein the electrode connected to the gate electrode is provided between the display electrode and the thin film transistor but not provided on or under the second thin film transistor. ### Claim 19 A display device comprising: an insulative substrate; a thin film transistor including a gate electrode, a gate insulating film and a channel region; a display electrode connected to one of a source region of the thin film transistor and a drain region of the thin film transistor, said display electrode being extended above the channel region of the thin film transistor; an electrode provided between the channel region of the thin film transistor and the display electrode, wherein a gate voltage is applied to the electrode; a light emitting layer formed on said display electrode, wherein said display electrode is an electrode used in an organic electro luminescent device; and at least one pixel, wherein each pixel comprises the thin film transistor and a second thin film transistor, wherein the display electrode is extended above the thin film transistor but not extended above said second thin film transistor. ### Claim 20 (depends on 19) The display device according to claim 19, wherein the display electrode is a reflective display electrode made of a reflective material. ### Claim 21 (depends on 19) The display device according to claim 19, wherein the electrode connected to the gate electrode is provided between the display electrode and the thin film transistor but not provided on or under the second thin film transistor. ### Claim 22 A display device comprising: an insulative substrate; a thin film transistor including a gate electrode, a gate insulating film and a channel region; a display electrode connected to one of a source region of the thin film transistor and a drain region of the thin film transistor, said display electrode being extended above the channel region of the thin film transistor; an electrode provided between the channel region of the thin film transistor and the display electrode, wherein a voltage different from a display electrode voltage is applied to the electrode; and a light emitting layer formed on said display electrode, wherein said display electrode is an electrode used in an organic electro luminescent device; and at least one pixel, wherein each pixel comprises the thin film transistor and a second tin film transistor, wherein to display electrode is extended above the tin film transistor but not extended above said second thin film transistor. ### Claim 23 (depends on 22) The display device according to claim 22, wherein the display electrode is a reflective display electrode made of a reflective material. ### Claim 24 (depends on 22) The display device according to claim 22, wherein the electrode connected to the gate electrode is provided between the display electrode and the thin film transistor but not provided between the display electrode and the second thin film transistor.