Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits

Abstract

Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic properties. By allowing the MOSFET channel to be either at the surface or buried, one can create high-speed digital and/or analog circuits. The planarization before the device epitaxial layers are deposited ensures a flat surface for state-of-the-art lithography. In accordance with one embodiment of the invention, there is provided a semiconductor structure including a planarized relaxed Si1−xGex layer on a substrate; and a device heterostructure deposited on said planarized relaxed Si1−xGex layer including at least one strained layer.

Dependencies are inferred from the claim text.