Post chemical-mechanical planarization (CMP) cleaning composition
AssigneeAdvanced Technology Materials, Inc.
InventorsShahriar Naghshineh, Jeff Barnes, Ewa B. Oldak
Life of this patent
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Abstract
A cleaning solution for cleaning microelectronic substrates, particularly for post-CMP or via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, optionally an organic acid, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide, monoethylanolamine, gallic acid ascorbic acid, and water with the alkalinity of the cleaning solution greater than 0.073 milliequivalents base per gram of solution.
Claims8
A cleaning solution for cleaning a copper-containing integrated circuit after chemical-mechanical polishing during manufacture of said integrated circuit, the cleaning solution comprising:
- 0.05 wt % to 12.4 wt % a quaternary ammonium hydroxide selected from the group consisting of tetraalkylammonium hydroxide, where the alkyl contains C atoms numbered from 1 to 10, and combinations thereof,
- 0.2 wt % to 27.8 wt % a polar organic amine selected from the group consisting of monoethanolamine, aminoethylethanolamine, N-methylaminoethanol, aminoethoxyethanol, diethanolamine, triethanolamine, C2-C5 alkanolamines, and combinations thereof,
- 0.1 wt % to 4.0 wt % of an organic acid being gallic acid
- 1.0 wt % to 10.9 wt % a corrosion inhibitor selected from the group consisting of ascorbic acid (Vitamin C), L(+)-ascorbic acid, isoascorbic acid, ascorbic acid derivatives, and combinations thereof,
- balance deionized water and;
- wherein the alkalinity of the solution is greater than 0.073 milliequivalents base per gram.
A cleaning solution for cleaning copper-containing microelectronic substrates, the cleaning solution comprising:
- 1. 0.05 to 12.4 wt % tetramethylammonium hydroxide;
- 2. 0.2 to 27.8 wt % monoethanolamine;
- 3. 0.1 to 4 wt % gallic acid;
- 4. 0.2 to 10.9% ascorbic acid and
- 5. deionized water,
- wherein the alkalinity of the solution is greater than 0.073 milliequivalents base per gram.
A cleaning solution for post-CMP cleaning, consisting essentially of 0.05 wt % to 1.25 wt % tetramethylammonium hydroxide, 0.2 wt % to about 2.25 wt % monoethanolamine, 0.1 wt % to 1 wt % gallic acid;
- and 0.10 to about 0.9 wt % ascorbic acid, balance water.
A via cleaning solution consisting essentially of 1.8 wt % to 12.4 wt % tetramethylammonium hydroxide, 2.0 wt % to about 27.8 wt % monoethanolamine, 0.1 wt % to 4 wt % gallic acid;
- 0.2 wt % to 10.9% ascorbic acid, balance water.
A cleaning solution for cleaning a copper-containing integrated circuit after chemical-mechanical polishing during manufacture of said integrated circuit consisting essentially of:
- from 1.5 wt % to 12.5 wt % of a concentrate consisting of 1.8 wt % to 12.4 wt % of quaternary ammonium hydroxide wherein the alkyl contains one of C1 through C10 atoms or combinations of C1 through C10 atoms, 2.0 wt % to 27.8 wt % of a polar organic amine selected from the group consisting of monoethanolamine, aminoethylethanolamine, N-methylaminoethanol, aminoethoxyethanol, diethanolamine, triethanolamine, C2-C5 alkanolamines, and mixtures thereof;
- 0 wt % to 4 wt % of gallic acid 1.0 wt % to 10.9 wt % corrosion inhibitor selected from the group consisting essentially of ascorbic acid (Vitamin C), L(+)-ascorbic acid, isoascorbic acid, ascorbic acid derivatives, and combinations thereof, balance water;
- and,
- 87.5 wt % to 98.5 wt % deionized water, with the alkalinity of the solution being greater than 0.073 milliequivalents base per gram.
A cleaning solution for cleaning copper-containing microelectronic substrates, the cleaning solution consisting of 1.5 wt % to 12.5 wt % of a concentrate consisting of 1.8 to 12.4 wt % tetramethylammonium hydroxide, 2 to 27.8 wt % monoethanolamine 0.1 to 4.0 wt % gallic acid 1.0 to 10.9 wt % ascorbic acid, balance water, and 87.5 to 98.5 wt % deionized water, the solution having an alkalinity greater than 0.073 milliequivalents base per gram of solution.
Dependencies are inferred from the claim text.