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US 6,723,666 B1Granted
Method for reducing gate oxide surface irregularities
AssigneeAdvanced Micro Devices, Inc.
InventorsWilliam G. En, Philip A. Fisher
Life of this patent
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Abstract
Gate oxide surface irregularities, such as surface roughness, are reduced by treatment with an oxygen-containing plasma. Embodiments include forming a gate oxide layer and then treating the formed gate oxide layer with an oxygen plasma to repair weak spots and fill in pin holes and surface irregularities, thereby reducing gate/gate oxide interface roughness.
Claims10
A method of manufacturing a semiconductor device, the method comprising:
- forming a gate oxide layer on an upper surface of a semiconductor substrate, the gate oxide layer having an upper surface with surface imperfections;
- and
- treating the upper surface of the gate oxide layer with an oxygen-containing plasma to reduce the surface imperfections.
Dependencies are inferred from the claim text.