Methods of forming gate oxide films in integrated circuit devices using wet or dry oxidization processes with reduced chloride
AssigneeSamsung Electronics Co., Ltd.
InventorsKong-soo Lee, Jae-jong Han, Sung-eui Kim
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Abstract
Methods of forming gate oxide films in integrated circuit devices using wet or dry oxidization processes with a reduced amount of chloride are disclosed. A gate oxide film is formed on a substrate on an active region adjacent to a trench isolation region in a first gas atmosphere with a first amount of chloride. The gate oxide film is annealed in a second gas atmosphere including a second amount of chloride that is greater than the first amount.
Claims29
A method for forming a gate oxide film in an integrated circuit device comprising:
- forming a gate oxide film on a substrate on an active region adjacent to a trench isolation region in a first gas atmosphere with a first amount of chloride;
- and
- annealing the gate oxide film in a second gas atmosphere including a second amount of chloride that is greater than the first amount of chloride.
A method for forming a gate oxide film in a integrated circuit device comprising:
- forming a first gate oxide film having a first thickness on a integrated circuit substrate where an active region is defined by a trench isolation region having a liner formed on an inner sidewall of a trench wherein the first gate oxide film is formed by an oxidization process in a first gas atmosphere without chloride;
- annealing the first gate oxide film in a second gas atmosphere including chloride;
- forming a pattern on the integrated circuit substrate wherein the pattern exposes a first region of the integrated circuit substrate where a thin gate oxide film is formed;
- removing a portion of the first gate oxide film from the first region using the pattern as an etching mask;
- removing the pattern;
- and
- forming a second gate oxide film having a second thickness that is less than the first thickness on the first gate oxide film and on the first region by an oxidization process using a third gas atmosphere.
Dependencies are inferred from the claim text.