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US 6,723,661 B2Granted
Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
AssigneeAmberWave Systems Corporation
InventorEugene A. Fitzergald
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Abstract
Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic properties. By allowing the MOSFET channel to be either at the surface or buried, one can create high-speed digital and/or analog circuits. The planarization before the device epitaxial layers are deposited ensures a flat surface for state-of-the-art lithography.
Claims20
A method of fabricating a semiconductor structure, the method comprising the steps of:
- providing a substrate;
- providing a relaxed layer thereon;
- planarizing the relaxed layer to an average surface roughness less than 2 nm;
- and
- epitaxially growing a strained channel layer above the relaxed planarized layer, the channel layer having an average surface roughness of less than 2 nm.
2 more elements
Dependencies are inferred from the claim text.