US 6,723,658 B2Granted

Gate structure and method

AssigneeTexas Instruments Incorporated

InventorsMona M. Eissa, Antonio L. P. Rotondaro

Life of this patent

Estimating the term…

A MOSFET structure with silicate gate dielectrics and silicon or metal gates with HF-based wet silicate gate dielectric etch.

Dependent claims

A fabrication method, comprising:

(a) providing a silicate gate dielectric layer with gates thereon;
(b) etching exposed portions of said layer with a solution containing HF, H2O2 and HNO3.

Dependencies are inferred from the claim text.

H10P 50/283
Of inorganic materials: by chemical means
H10D 64/01316
Characterised by the conductor: the conductor comprising a layer of elemental metal contacting the insulator, e.g. Ta, W, Mo or Al
H10D 64/0132
The conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN: the conductor being…
H10D 64/01342
On single crystalline silicon, e.g. chemical oxidation using a liquid: by deposition, e.g. evaporation, ALD or laser deposition

From the US filing history. Foreign family members aren’t listed.

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