# US 6,723,650 B1 · TEM sample preparation using transparent defect protective coating

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- Number: US 6,723,650 B1
- Document ID: US6723650B1
- Status: Granted
- Kind: B1
- Application number: 10/407,083
- Filed: 2003-04-03
- Granted: 2004-04-20
- Earliest claimed: 2003-04-03
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Chieh-Fei Chang
- Web page: https://patentgrep.com/patent/US6723650B1

## CPC

- H01J 37/26: Electron or ion microscopes; Electron or ion diffraction tubes
- G01N 1/32: Polishing; Etching
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)

## Abstract

A technique for preparing a TEM sample for imaging of a defect in a wafer section during the course of integrated circuit fabrication on semiconductor wafer substrates. The TEM sample preparation technique of the present invention includes cutting a first cross-section void in the wafer section to expose the defect, providing a substantially transparent material on the defect to protect the defect from cutting particles, depositing a cutting line on the wafer section adjacent to the first cross-section void, and cutting a second cross-section void along the cutting line to define a TEM sample having a selected thickness between the first and second cross-section voids and containing the defect.

## Claims

### Claim 1

A method of preparing a TEM sample, comprising the steps of:
providing a wafer section having a defect;
providing a cutting line on said wafer section adjacent to said defect;
cutting a first cross-section void in said wafer section along said cutting line to expose said defect;
depositing a substantially transparent coating material on said defect; and
cutting a second cross-section void in said wafer section along said cutting line to define said TEM sample.

### Claim 2 (depends on 1)

The method of claim 1 wherein said cutting line comprises a metal cutting line.

### Claim 3 (depends on 1)

The method of claim 1 wherein said coating material comprises an epoxy.

### Claim 4 (depends on 3)

The method of claim 3 wherein said cutting line comprises a metal cutting line.

### Claim 5 (depends on 1)

The method of claim 1 wherein said TEM sample has a thickness of from about 10 nm to about 100 nm.

### Claim 6 (depends on 5)

The method of claim 5 wherein said cutting line comprises a metal cutting line.

### Claim 7 (depends on 5)

The method of claim 5 wherein said coating material comprises an epoxy.

### Claim 8 (depends on 7)

The method of claim 7 wherein said cutting line comprises a metal cutting line.