Method for chemical mechanical polishing of thin films using end-point indicator structures

A method of CMP thin films during fabrication of IC devices, comprising:

• preparing a substrate, including building IC component structures on the substrate;
• depositing a bottom electrode on the substrate;
• depositing an first CMP layer having a first known CMP selectivity on the substrate;
• patterning the first CMP layer to form a pattern having a lower margin;
• forming indicator structures on the first CMP layer in the pattern;
• depositing a CMR layer having a second known CMP selectivity relative to that of the oxide layer, including depositing portions of the CMR layer in the pattern of the first CMP layer;
• CMP the structure with a slurry of silica and ammonium hydroxide so that the indicator structures are removed and any portion of the first CMP layer and CMR layer are removed to a level corresponding to the lower margin;
• and
• completing the IC structure.

A method of CMP thin films during fabrication of IC devices, comprising:

• preparing a substrate, including building IC component structures on the substrate;
• depositing a bottom electrode on the substrate;
• depositing an first CMP layer taken from the group of materials consisting of silicon dioxide and silicon nitride having a first known CMP selectivity on the substrate;
• patterning the first CMP layer to form a pattern having a lower margin;
• forming indicator structures on the first CMP layer in the pattern;
• depositing a CMR layer having a second known CMP selectivity relative to that of the oxide layer, including depositing portions of the CMR layer in the pattern of the first CMP layer;
• CMP the structure with a slurry of silica and ammonium hydroxide so that the indicator structures are removed and any portion of the first CMP layer and CMR layer are removed to a level corresponding to the lower margin;
• and
• completing the IC structure.