Method of manufacturing semiconductor device and method of determining film formation time, chamber, chemical vapor deposition apparatus and boat thereof, etching apparatus, and film formation process system

A method of manufacturing a semiconductor device, comprising the steps of:

• (a) forming a first layer on both a main surface and a back surface of said semiconductor substrate by performing the chemical vapor deposition method on said semiconductor substrate at a first temperature and a first pressure;
• (b) removing said first layer formed on said back surface;
• and
• (c) forming a second layer by performing the chemical vapor deposition method at a second temperature higher than said first temperature and a second pressure lower than said first pressure for a second period.

A method of manufacturing a semiconductor device, comprising the steps of:

• (a) forming a first layer on both a main surface and a back surface of a semiconductor substrate by performing the chemical vapor deposition method on said semiconductor substrate at a first temperature and a first pressure;
• (b) covering said first layer formed on said back surface;
• and
• (c) forming a second layer by performing the chemical vapor deposition method at a second temperature higher than said first temperature and a second pressure lower than said first pressure,
• wherein said first layer is covered in said step (b) with a film which prevents gas desorption from said first layer in said step (c).