# US 6,723,637 B2 · Semiconductor device and method for fabricating the same

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- Number: US 6,723,637 B2
- Document ID: US6723637B2
- Status: Granted
- Kind: B2
- Application number: 10/441,128
- Filed: 2003-05-20
- Published: 2003-11-06
- Granted: 2004-04-20
- Earliest claimed: 2000-11-06
- Assignees: Matsushita Electric Industrial Co., Ltd.
- Inventors: Toshie Kutsunai; Shinichiro Hayashi; Takumi Mikawa; Yuji Judai
- Web page: https://patentgrep.com/patent/US6723637B2

## CPC

- H10D 1/682: {having dielectrics comprising perovskite structures}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

An impurity diffusion layer serving as the source or the drain of a transistor is formed in a semiconductor substrate, and a protection insulating film is formed so as to cover the transistor. A capacitor lower electrode, a capacitor dielectric film of an oxide dielectric film and a capacitor upper electrode are successively formed on the protection insulating film. A plug for electrically connecting the impurity diffusion layer of the transistor to the capacitor lower electrode is buried in the protection insulating film. An oxygen barrier layer is formed between the plug and the capacitor lower electrode. The oxygen barrier layer is made from a composite nitride that is a mixture or an alloy of a first nitride having a conducting property and a second nitride having an insulating property.

## Claims

### Claim 1

A method for fabricating a semiconductor device comprising the steps of:
forming an impurity diffusion layer serving as a source or a drain of a transistor in a semiconductor substrate;
forming a first protection insulating film covering said transistor;
burying, in said first protection insulating film, a plug having a lower end electrically connected to said impurity diffusion layer of said transistor;
forming, on said first protection insulating film, an oxygen barrier layer having a lower face connected to an upper end of said plug;
forming a capacitor lower electrode on said oxygen barrier layer;
forming, on said first protection insulating film, a second protection insulating film covering said oxygen barrier layer and said capacitor lower electrode, and
planarizing said second protection insulating film, whereby placing an upper face of said second protection insulating film at substantially the same level as an upper face of said capacitor lower electrode;
forming a capacitor dielectric film having a plane shape larger than a plane shape of said capacitor lower electrode by depositing an oxide dielectric film on said capacitor lower electrode and said second protection insulating film and patterning said oxide dielectric film; and
forming a capacitor upper electrode on said capacitor dielectric film.

### Claim 2 (depends on 1)

The method for fabricating a semiconductor device of claim 1,
wherein said oxygen barrier layer is made from a composite nitride that is a mixture or an alloy of a first nitride having a conducting property and a second nitride having an insulating property.

### Claim 3 (depends on 1)

The method for fabricating a semiconductor device of claim 1, further comprising, between the step of forming said oxygen barrier layer and the step of forming said capacitor lower electrode, a step of forming an upper oxygen barrier layer made from a metal that has a conducting property when it is oxidized.

### Claim 4 (depends on 1)

The method for fabricating a semiconductor device of claim 1, further comprising, between the step of forming said oxygen barrier layer and the step of forming said capacitor lower electrode, a step of forming an upper oxygen barrier layer made from a metal oxide having a conducting property.