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US 6,723,631 B2Granted
Fabrication method of semiconductor integrated circuit device
AssigneeRenesas Technology Corp.
InventorsJunji Noguchi, Shoji Asaka, Nobuhiro Konishi, Naohumi Ohashi, Hiroyuki Maruyama
Life of this patent
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Abstract
The copper interconnect formed by the use of a damascene technique is improved in dielectric breakdown strength (reliability). During post-CMP cleaning, alkali cleaning, a deoxidizing process due to hydrogen annealing or the like, and acid cleaning are carried out in this order. After the post-CMP cleaning and before forming an insulation film for a cap film, hydrogen plasma and ammonia plasma processes are carried out on the semiconductor substrate. In this way, a copper-based buried interconnect is formed in an interlayer insulation film structured of an insulation material having a low dielectric constant.
Claims39
A fabrication method of a semiconductor integrated circuit device, comprising the steps of:
- (a) a step of forming a first insulation film on a main surface of a semiconductor substrate;
- (b) a step of forming an interconnect opening in said first insulation film;
- (c) a step of depositing a first conductor film for interconnect formation and a second conductor film based on copper for interconnect formation in that order on said first insulation film including an inside of said interconnect opening;
- (d) a polishing process of polishing said first and second conductor films for interconnect formation thereby forming an interconnect in said interconnect opening;
- (e) a process of carrying out a cleaning process on the semiconductor substrate after said polishing process;
- (f) a process of carrying out a plasma process in a hydrogen atmosphere on the substrate after said cleaning process;
- (g) a process of carrying out a plasma process in an ammonia atmosphere on the substrate after said cleaning process;
- and
- (h) a process of depositing a second insulation film on said first insulation film and interconnect after said hydrogen gas plasma and ammonia gas plasma processes.
6 more elements
A fabrication method of a semiconductor integrated circuit device, comprising the steps of:
- (a) a step of forming a first insulation film on a main surface of a semiconductor substrate;
- (b) a step of forming an interconnect opening in said first insulation film;
- (c) a step of depositing a conductor film based on copper for interconnect formation on said first insulation film including an inside of said interconnect opening;
- (d) a polishing process of polishing said conductor film based on copper for interconnect formation thereby forming an interconnect in said interconnect opening;
- (e) a process of carrying out a cleaning process on the semiconductor substrate after said polishing process;
- (f) a process of carrying out a plasma process in a hydrogen atmosphere on the substrate after said cleaning process;
- (g) a process of carrying out a plasma process in an ammonia atmosphere on the substrate after said cleaning process;
- and
- (h) a process of depositing a second insulation film on said first insulation film and interconnect after said hydrogen gas plasma and ammonia gas plasma processes.
6 more elements
A fabrication method of a semiconductor integrated circuit device, comprising the steps of:
- (a) a step of forming a first insulation film on a main surface of a semiconductor substrate;
- (b) a step of forming an interconnect opening in said first insulation film;
- (c) a step of depositing a first conductor film for interconnect formation and a second conductor film based on copper for interconnect formation in that order on said first insulation film including an inside of said interconnect opening;
- (d) a polishing process of polishing said first and second conductor films for interconnect formation thereby forming an interconnect in said interconnect opening;
- (e) a process of carrying out a cleaning process using an alkali solution, a deoxidizing process and a cleaning process using an acid solution in that order on the semiconductor substrate after said polishing process;
- and
- (f) a process of depositing a second insulation film on said first insulation film.
4 more elements
A fabrication method of a semiconductor integrated circuit device, comprising the steps of:
- (a) a step of forming a first insulation film on a main surface of a semiconductor substrate;
- (b) a step of forming an interconnect opening in said first insulation film;
- (c) a step of depositing a first conductor film for interconnect formation and a second conductor film based on copper for interconnect formation in that order on said first insulation film including an inside of said interconnect opening;
- (d) a polishing process of polishing said first and second conductor films for interconnect formation thereby forming an interconnect in said interconnect opening;
- (e) a process of carrying out a deoxidizing process and a process of using an acid solution in that order on the semiconductor substrate after said polishing process;
- and
- (f) a process of depositing a second insulation film on said first insulation film and interconnect.
4 more elements
A fabrication method of a semiconductor integrated circuit device, comprising the steps of:
- (a) a step of forming a first insulation film on a main surface of a semiconductor substrate;
- (b) a step of forming an interconnect opening in said first insulation film;
- (c) a step of depositing a conductor film based on copper for interconnect formation on said first insulation film including an inside of said interconnect opening;
- (d) a process of polishing said conductor film based on copper for interconnect formation thereby forming an interconnect in said interconnect opening;
- (e) a process of carrying out a cleaning process using an alkali solution, a deoxidizing process and a cleaning process using an acid solution in that order on the semiconductor substrate after said polishing process;
- and
- (f) a process of depositing a second insulation film on said first insulation film.
4 more elements
A fabrication method of a semiconductor integrated circuit device, comprising the steps of:
- (a) a step of forming a first insulation film on a main surface of a semiconductor substrate;
- (b) a step of forming an interconnect opening in said first insulation film;
- (c) a step of depositing a conductor film based on copper for interconnect formation on said first insulation film including an inside of said interconnect opening;
- (d) a process of polishing said conductor film based on copper for interconnect formation thereby forming an interconnect in said interconnect opening;
- (e) a process of carrying out a deoxidizing process and a cleaning process using an acid solution on the semiconductor substrate of after said polishing process;
- and
- (f) a process of depositing a second insulation film on said first insulation film.
4 more elements
Dependencies are inferred from the claim text.