# US 6,723,626 B2 · Method of manufacturing semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 6,723,626 B2 - Document ID: US6723626B2 - Status: Granted - Kind: B2 - Application number: 10/232,532 - Filed: 2002-09-03 - Published: 2003-03-06 - Granted: 2004-04-20 - Earliest claimed: 2001-09-04 - Assignees: NEC Electronics Corporation - Inventors: Yasuaki Tsuchiya; Akira Kubo - Web page: https://patentgrep.com/patent/US6723626B2 ## CPC - H10P 70/54: {Cleaning of wafer edges} - H10P 52/403: {of conductive or resistive materials} - H10P 70/277: {the processing being a planarisation of conductive layers} - H10P 70/56: {Cleaning of wafer backside} - H10W 20/062: {by smoothing of conductive parts, e.g. by planarisation} - Y10S 438/906: Cleaning of wafer as interim step - Y10S 438/963: Removing process residues from vertical substrate surfaces - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ## Abstract In a method of manufacturing a semiconductor device, an insulating film is formed on a semiconductor substrate, and a wiring line groove is formed in the insulating film. Then, a conductive film is formed to fill the wiring line groove and to cover the insulating film. The conductive film is removed using a CMP polishing method until the insulating film is exposed, to complete a wiring line. Subsequently, a front side of the semiconductor substrate is rinsed on which the wiring line is formed, and then a back side of the semiconductor substrate is rinsed while supplying to the front side of the semiconductor substrate, a protection solution for forming a protection film in an exposed surface of the wiring line. ## Claims ### Claim 1 A method of manufacturing a semiconductor device, comprising: forming an insulating film on a semiconductor substrate; forming a wiring line groove in said insulating film; forming a conductive film to fill said wiring line groove and to cover said insulating film; removing said conductive film using a chemical mechanical polishing method until said insulating film is exposed, to complete a wiring line; rinsing a front side of said semiconductor substrate on which said wiring line is formed; and rinsing a backside of said semiconductor substrate while supplying to said front side of said semiconductor substrate, a protection solution which forms a protection film on an exposed surface of said wiring line. ### Claim 2 (depends on 1) The method according to claim 1, wherein said conductive film comprises copper. ### Claim 3 (depends on 1) The method according to claim 1, wherein said protection solution comprises at least one of a benzotriazole and a benzotriazole derivative. ### Claim 4 (depends on 3) The method according to claim 3, wherein a concentration of said at least one of a benzotriazole and a benzotriazole derivative in said protection solution is in a range of 0.01 to 0.1 wt %. ### Claim 5 A method of manufacturing a semiconductor device, comprising: forming an insulating film on a semiconductor substrate; forming a wiring line groove in said insulating film; forming a first conductive film to cover an inner wall surface of said wiring line groove and said insulating film; forming a second conductive film to fill said wiring line groove and to cover said first conductive film; removing said first and second conductive films using a CMP polishing method until said insulating film is exposed, to complete a wiring line; rinsing a front side of said semiconductive substrate, on which said wiring line is formed; and rinsing a backside of said semiconductor substrate while supplying to said front side of said semiconductor substrate, a protection solution which forms a protection film on an exposed surface of said wiring line. ### Claim 6 (depends on 5) The method according to claim 5, wherein said second conductive film comprises copper. ### Claim 7 (depends on 5) The method according to claim 5, wherein said protection solution comprises at least one of a benzotriazole and a benzotriazole derivative. ### Claim 8 (depends on 7) The method according to claim 7, wherein a concentration of said at least one of a benzotriazole and a benzotriazole derivative in said protection solution is in a range of 0.01 to 0.1 wt %. ### Claim 9 A method of manufacturing a semiconductor device, comprising: forming a first damascene wiring line above a semiconductor substrate using a conductive film; forming an upper insulating film on said first damascene wiring line; forming a via-hole to pass through said upper insulating film to said first damascene wiring line; forming a second damascene wiring line in said via-hole; and rinsing a backside of said semiconductor substrate while rinsing a front side of said semiconductor substrate with a protection solution which forms a protection film on an exposed surface of said second damascene wiring line. ### Claim 10 (depends on 9) The method according to claim 9, wherein a metal of said first and second damascene wiring lines comprises copper. ### Claim 11 (depends on 9) The method according to claim 9, wherein said protection solution comprises at least one of a benzotriazole and a benzotriazole derivative. ### Claim 12 (depends on 11) The method according to claim 11, wherein a concentration of said at least one of a benzotriazole and a benzotriazole derivative in said protection solution is in a range of 0.01 to 0.1 wt %. ### Claim 13 The method of manufacturing a semiconductor device, comprising: forming a damascene wiring line above a semiconductor substrate using a conductive film; rinsing a front side of said semiconductor substrate on which said damascene wiring line is formed; and rinsing a backside of said semiconductor substrate while rinsing said front side of said semiconductor substrate with a protection solution which forms a protective film on an exposed surface of said damascene wiring line. ### Claim 14 (depends on 1) The method according to claim 1, further comprising: forming a barrier film on said insulating film and an inner wall surface of said wiring line groove with a barrier film. ### Claim 15 (depends on 5) The method according to claim 5, further comprising: forming a barrier film on said insulating film and an inner wall surface of said wiring line groove. ### Claim 16 (depends on 14) The method according to claim 14, wherein said removing said conductive film comprises removing a portion of said barrier film. ### Claim 17 (depends on 15) The method according to claim 15, wherein said removing said conductive film comprises removing a portion of said barrier film. ### Claim 18 (depends on 1) The method according to claim 1, further comprising: supplying said protection solution at a predetermined pressure. ### Claim 19 (depends on 1) The method according to claim 1, further comprising: supplying said protection solution at a flow rate of 1 L/min. ### Claim 20 (depends on 1) The method according to claim 1, wherein said removing said conductive film using a chemical mechanical polishing method is performed until a top surface of said insulating film is completely exposed, to complete a wiring line. ### Claim 21 (depends on 5) The method according to claim 5, wherein said removing said first and second conductive films using a chemical mechanical polishing method is performed until a top surface of said insulating film is completely exposed, to complete a wiring line. ### Claim 22 (depends on 9) The method according to claim 9, further comprising: removing said conductive film using a chemical mechanical polishing method is performed until a top surface of said lower insulating film is completely exposed. ### Claim 23 (depends on 13) The method according to claim 13, further comprising: removing said conductive film using a chemical mechanical polishing method is performed until a top surface of said lower insulating film is completely exposed.