Method for spacer patterned, high dielectric constant capacitor
AssigneeMicron Technology, Inc.
InventorDarwin A. Clampitt
Life of this patent
Estimating the term…
Abstract
A high dielectric constant memory cell capacitor and method for producing the same, wherein the memory cell capacitor utilizes relatively large surface area conductive structures of thin spacer width pillars or having edges without sharp corners that lead to electric field breakdown of the high dielectric constant material. The combination of high dielectric constant material in a memory cell along with a relatively large surface area conductive structure is achieved through the use of a buffer material as caps on the thin edge surfaces of the relatively large surface area conductive structures to dampen or eliminate the intense electric field which would be generated at the corners of the structures during the operation of the memory cell capacitor had the caps not been present.
Claims22
A method for fabricating a capacitor, comprising:
- providing conductive material in electrical communication with a region of a semiconductor substrate;
- removing portions of the conductive material to form protruding structures including edge portions;
- providing an insulative buffer material along the edge portions;
- applying a dielectric material over the protruding structures;
- and
- applying conductive material over the dielectric material.
A method for fabricating a memory cell, comprising:
- providing conductive material in electrical communication with a drain region of a semiconductor substrate;
- removing portions of the conductive material to form protruding structures;
- providing an insulative buffer material over edge portions of the protruding structures;
- applying a dielectric material over the protruding structures;
- and
- applying a conductive material over the dielectric material.
A method for fabricating a semiconductor DRAM, comprising:
- providing conductive material in electrical communication with a drain region of a semiconductor substrate;
- removing portions of the conductive material to form protruding structures;
- providing an insulative buffer material over edge portions of the protruding structures;
- applying a dielectric material over the protruding structures;
- and
- applying a conductive material over the dielectric material.
A method for fabricating a capacitor, comprising:
- providing conductive material in electrical communication with a drain region of a semiconductor substrate;
- removing portions of the conductive material to form protruding structures including edge portions;
- providing an insulative buffer material comprising silicon nitride along the edge portions;
- applying dielectric material over the protruding structures;
- and
- applying conductive material over the dielectric material.
A method for fabricating a memory cell, comprising:
- providing conductive material in electrical communication with a drain region of a semiconductor substrate;
- removing portions of the conductive material to form protruding structures;
- providing an insulative buffer material comprising silicon nitride over edge portions of the protruding structures;
- applying dielectric material over the protruding structures;
- and
- applying conductive material over the dielectric material.
Dependencies are inferred from the claim text.