Methods of forming capacitors and methods of forming capacitor dielectric layers

A method of forming a capacitor comprising:

• forming first capacitor electrode material comprising silicon over a semiconductor substrate;
• forming a silicon nitride comprising layer over the first capacitor electrode material, the silicon nitride comprising layer comprising pinholes formed therein;
• providing the semiconductor substrate with silicon nitride comprising layer within a chamber;
• generating an oxygen comprising plasma remote from the chamber, the oxygen comprising plasma being generated at least in part from one of a) a mixture of O2 and O3;
• b) a mixture of O2 and N2O;
• c) a mixture of O3 and N2O;
• or d) a mixture of O2, O3 and N2O;
• feeding the remote plasma generated oxygen to the semiconductor substrate within the chamber for no longer than 15 seconds at a substrate temperature of from 550° C. to 750° C. effective to form a silicon oxide comprising layer over the silicon nitride comprising layer and effective to fill said pinholes with silicon oxide, the chamber being essentially void of hydrogen during the feeding;
• and
• after the feeding, forming second capacitor electrode material over the silicon oxide comprising layer.

A method of forming a capacitor dielectric layer, comprising:

• forming a silicon nitride comprising layer over a substrate;
• providing the substrate with silicon nitride comprising layer within a chamber;
• generating an oxygen comprising plasma remote from the chamber, the oxygen comprising plasma being generated at least in part from O3;
• and
• feeding the remote plasma generated oxygen to the substrate within the chamber at a substrate temperature of no greater than 750° C. effective to form a silicon oxide comprising layer on the silicon nitride comprising layer.

A method of forming a capacitor dielectric layer, comprising:

• forming a silicon nitride comprising layer over a substrate;
• providing the substrate with silicon nitride comprising layer within a chamber;
• generating an oxygen comprising plasma remote from the chamber, the oxygen comprising plasma being generated at least in part from one of a) a mixture of O2 and O3;
• b) a mixture of O2 and N2O;
• c) a mixture of O3 and N2O;
• or d) a mixture of O2, O3 and N2O;
• and
• feeding the remote plasma generated oxygen to the substrate within the chamber for no longer than 15 seconds at a substrate temperature of from 550° C. to 750° C. effective to form a silicon oxide comprising layer over the silicon nitride comprising layer.